SANMARTIN, MICHELE
SANMARTIN, MICHELE
Istituto per la Microelettronica e Microsistemi - IMM
A MEMS-enabled deployable trace chemical sensor based on fast gas-chromatography and quartz enhanced photoacousic spectoscopy
2019 Zampolli, Stefano; Mengali, Sandro; Liberatore, Nicola; Elmi, Ivan; Masini, Luca; Sanmartin, Michele; Viola, Roberto
Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films
2013 Canino, M; Summonte, C; Allegrezza, M; Shukla, ; Rimpy, ; Jain, ; I, P; Bellettato, M; Desalvo, A; Mancarella, F; Sanmartin, M; Terrasi, A; Loeper, P; Schnabel, M; Janz, ; S,
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET
2009 Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation
2009 Moscatelli, Francesco; Moscatelli, Francesco; Nipoti, Roberta; Nipoti, Roberta; Solmi, Sandro; Solmi, Sandro; Cristiani, Stefano; Cristiani, Stefano; Sanmartin, Michele; Sanmartin, Michele; Poggi, Antonella; Poggi, Antonella
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
2007 Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O-2 oxidation ambient
2006 Poggi, Antonella; Poggi, Antonella; Moscatelli, Francesco; Moscatelli, Francesco; Scorzoni, ; Andrea, ; Marino, ; Giovanni, ; Nipoti, Roberta; Nipoti, Roberta; Sanmartin, Michele; Sanmartin, Michele
Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient
2006 Poggi A; Moscatelli F; Scorzoni A; Marino G; Nipoti R; Sanmartin M
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A MEMS-enabled deployable trace chemical sensor based on fast gas-chromatography and quartz enhanced photoacousic spectoscopy | 1-gen-2019 | Zampolli, Stefano; Mengali, Sandro; Liberatore, Nicola; Elmi, Ivan; Masini, Luca; Sanmartin, Michele; Viola, Roberto | |
| Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films | 1-gen-2013 | Canino, M; Summonte, C; Allegrezza, M; Shukla, ; Rimpy, ; Jain, ; I, P; Bellettato, M; Desalvo, A; Mancarella, F; Sanmartin, M; Terrasi, A; Loeper, P; Schnabel, M; Janz, ; S, | |
| Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET | 1-gen-2009 | Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M | |
| Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation | 1-gen-2009 | Moscatelli, Francesco; Moscatelli, Francesco; Nipoti, Roberta; Nipoti, Roberta; Solmi, Sandro; Solmi, Sandro; Cristiani, Stefano; Cristiani, Stefano; Sanmartin, Michele; Sanmartin, Michele; Poggi, Antonella; Poggi, Antonella | |
| Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose | 1-gen-2007 | Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R | |
| Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O-2 oxidation ambient | 1-gen-2006 | Poggi, Antonella; Poggi, Antonella; Moscatelli, Francesco; Moscatelli, Francesco; Scorzoni, ; Andrea, ; Marino, ; Giovanni, ; Nipoti, Roberta; Nipoti, Roberta; Sanmartin, Michele; Sanmartin, Michele | |
| Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient | 1-gen-2006 | Poggi A; Moscatelli F; Scorzoni A; Marino G; Nipoti R; Sanmartin M |