TREVISI, GIOVANNA
TREVISI, GIOVANNA
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
1.3 µm single quantum dot emission from metamorphic InAs/InGaAs nanostructures
2011 Rivas, David; MunozMatutano, Guillermo; Suarez, Isaac; CanetFerrer, Josep; Alen, Benito; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; MartinezPastor, Juan
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates
2008 Seravalli L.; Frigeri P.; Trevisi G.; Franchi S.
2D-3D growth transition in metamorphic InAs/InGaAs quantum dots
2012 Seravalli, L; Trevisi, G; Frigeri, P
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3
2020 Longo, Emanuele; Mantovan, Roberto; Cecchini, Raimondo; D Overbeek, Michael; Longo, Massimo; Trevisi, Giovanna; Lazzarini, Laura; Tallarida, Graziella; Fanciulli, Marco; H Winter, Charles; Wiemer, Claudia
All optical switching of a single photon stream by excitonic depletion
2020 MuñozMatutano, Guillermo; Johnsson, Mattias; MartínezPastor, Juan; Rivas Góngora, David; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Volz, Thomas; Gurioli, Massimo
All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot
2016 Munozmatutano, G; Barrera, D; Fernandezpousa, C R; Chuliajordan, R; Seravalli, L; Trevisi, G; Frigeri, P; Sales, S; Martinezpastor, J
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
2017 Golovynskyi, S; Seravalli, L; Datsenko, O; Kozak, O; Kondratenko, Sv; Trevisi, G; Frigeri, P; Gombia, E; Lavoryk, Sr; Golovynska, I; Ohulchanskyy, Ty; Qu, J
BIPOLAR PHOTOVOLTAGE OF THE InAs/In(Ga)As/GaAs HETEROSTRUCTURES WITH QUANTUM DOTS
2016 Kozak, Oo; Golovynskyi, Sl; Seravalli, L; Dacenko, Oi; Kondratenko, Sv; Gombia, E; Trevisi, G; Frigeri, P; Golovynska, I; Ohulchanskyy, Ty; Qu, J
Broadband light sources based on InAs/InGaAs metamorphic quantum dots
2016 Seravalli, L; Gioannini, M; Cappelluti, F; Sacconi, F; Trevisi, G; Frigeri, P
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition
2023 Seravalli, Luca; Esposito, Fiorenza; Bosi, Matteo; Aversa, Lucrezia; Trevisi, Giovanna; Verucchi, Roberto; Lazzarini, Laura; Rossi, Francesca; Fabbri, Filippo
Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures
2013 Seravalli, L.; Trevisi, G.; Frigeri, P.
Carrier dynamics of single InAs Quantum Dots studied by two colour intensity interferometry correlation
2013 Muñoz Matutano, Guillermo; Rivas, David; García Calzada, Raul; Canet Ferrer, Josep; Lucaseravalli, ; Trevisi, Giovanna; Frigeri, Paola; Martínez Pastor, Juan
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
2017 Golovynskyi, S; Seravalli, L; Datsenko, O; Trevisi, G; Frigeri, P; Gombia, E; Golovynska, I; Kondratenko, Sv; Qu, J; Ohulchanskyy, Ty
Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators
2017 Ziss D.; MartinSanchez J.; Lettner T.; Halilovic A.; Trevisi G.; Trotta R.; Rastelli A.; Stangl J.
Confinement of Excitons in Strain-engineered InAs/InGaAs/GaAs Metamorphic Quantum Dots
2013 Shaukat A. Khattak; Manus Hayne;Luca Seravalli; Giovanna Trevisi; Paola Frigeri
Coulomb screening induced by electrons trapped on interface of InAs/InGaAs quantum dots
2019 Sergii Golovynskyi; Oleksandr I. Datsenko; Luca Seravalli; Giovanna Trevisi; Paola Frigeri; Ivan S. Babichuk; Iuliia Golovynska; Baikui; Junle Qu
Cross-Plane Thermal Conductivity in III-V Epitaxial Superlattices: The Role of Composition
2014 Trevisi, G; Seravalli, L; Frigeri, P; Buffagni, E; Rossi, F; Ferrari, C; Nausner, L; Rastelli, A; Pchen,
Deep Level Influence on Photoconductivity of Metamorphic InAs/InGaAs Quantum Dot Structures
2018 Golovynskyi, S; Datsenko, Oi; Seravalli, L; Trevisi, G; Frigeri, P; Babichuk, Is; Golovynska, I; Li, Baikui; Qu, Junle
Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers
2017 Golovynskyi S.; Datsenko O.; Seravalli L.; Kozak O.; Trevisi G.; Frigeri P.; Babichuk I.S.; Golovynska I.; Qu J.
Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening
2019 Golovynskyi, Sergii; Datsenko Oleksandr, I; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Babichuk Ivan, S; Golovynska, Iuliia; Li, Baikui; Qu, Junle
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 1.3 µm single quantum dot emission from metamorphic InAs/InGaAs nanostructures | 1-gen-2011 | Rivas, David; MunozMatutano, Guillermo; Suarez, Isaac; CanetFerrer, Josep; Alen, Benito; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; MartinezPastor, Juan | |
| 1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates | 1-gen-2008 | Seravalli L.; Frigeri P.; Trevisi G.; Franchi S. | |
| 2D-3D growth transition in metamorphic InAs/InGaAs quantum dots | 1-gen-2012 | Seravalli, L; Trevisi, G; Frigeri, P | |
| ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 | 1-gen-2020 | Longo, Emanuele; Mantovan, Roberto; Cecchini, Raimondo; D Overbeek, Michael; Longo, Massimo; Trevisi, Giovanna; Lazzarini, Laura; Tallarida, Graziella; Fanciulli, Marco; H Winter, Charles; Wiemer, Claudia | |
| All optical switching of a single photon stream by excitonic depletion | 1-gen-2020 | MuñozMatutano, Guillermo; Johnsson, Mattias; MartínezPastor, Juan; Rivas Góngora, David; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Volz, Thomas; Gurioli, Massimo | |
| All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot | 1-gen-2016 | Munozmatutano, G; Barrera, D; Fernandezpousa, C R; Chuliajordan, R; Seravalli, L; Trevisi, G; Frigeri, P; Sales, S; Martinezpastor, J | |
| Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices | 1-gen-2017 | Golovynskyi, S; Seravalli, L; Datsenko, O; Kozak, O; Kondratenko, Sv; Trevisi, G; Frigeri, P; Gombia, E; Lavoryk, Sr; Golovynska, I; Ohulchanskyy, Ty; Qu, J | |
| BIPOLAR PHOTOVOLTAGE OF THE InAs/In(Ga)As/GaAs HETEROSTRUCTURES WITH QUANTUM DOTS | 1-gen-2016 | Kozak, Oo; Golovynskyi, Sl; Seravalli, L; Dacenko, Oi; Kondratenko, Sv; Gombia, E; Trevisi, G; Frigeri, P; Golovynska, I; Ohulchanskyy, Ty; Qu, J | |
| Broadband light sources based on InAs/InGaAs metamorphic quantum dots | 1-gen-2016 | Seravalli, L; Gioannini, M; Cappelluti, F; Sacconi, F; Trevisi, G; Frigeri, P | |
| Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition | 1-gen-2023 | Seravalli, Luca; Esposito, Fiorenza; Bosi, Matteo; Aversa, Lucrezia; Trevisi, Giovanna; Verucchi, Roberto; Lazzarini, Laura; Rossi, Francesca; Fabbri, Filippo | |
| Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures | 1-gen-2013 | Seravalli, L.; Trevisi, G.; Frigeri, P. | |
| Carrier dynamics of single InAs Quantum Dots studied by two colour intensity interferometry correlation | 1-gen-2013 | Muñoz Matutano, Guillermo; Rivas, David; García Calzada, Raul; Canet Ferrer, Josep; Lucaseravalli, ; Trevisi, Giovanna; Frigeri, Paola; Martínez Pastor, Juan | |
| Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures | 1-gen-2017 | Golovynskyi, S; Seravalli, L; Datsenko, O; Trevisi, G; Frigeri, P; Gombia, E; Golovynska, I; Kondratenko, Sv; Qu, J; Ohulchanskyy, Ty | |
| Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators | 1-gen-2017 | Ziss D.; MartinSanchez J.; Lettner T.; Halilovic A.; Trevisi G.; Trotta R.; Rastelli A.; Stangl J. | |
| Confinement of Excitons in Strain-engineered InAs/InGaAs/GaAs Metamorphic Quantum Dots | 1-gen-2013 | Shaukat A. Khattak; Manus Hayne;Luca Seravalli; Giovanna Trevisi; Paola Frigeri | |
| Coulomb screening induced by electrons trapped on interface of InAs/InGaAs quantum dots | 1-gen-2019 | Sergii Golovynskyi; Oleksandr I. Datsenko; Luca Seravalli; Giovanna Trevisi; Paola Frigeri; Ivan S. Babichuk; Iuliia Golovynska; Baikui; Junle Qu | |
| Cross-Plane Thermal Conductivity in III-V Epitaxial Superlattices: The Role of Composition | 1-gen-2014 | Trevisi, G; Seravalli, L; Frigeri, P; Buffagni, E; Rossi, F; Ferrari, C; Nausner, L; Rastelli, A; Pchen, | |
| Deep Level Influence on Photoconductivity of Metamorphic InAs/InGaAs Quantum Dot Structures | 1-gen-2018 | Golovynskyi, S; Datsenko, Oi; Seravalli, L; Trevisi, G; Frigeri, P; Babichuk, Is; Golovynska, I; Li, Baikui; Qu, Junle | |
| Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers | 1-gen-2017 | Golovynskyi S.; Datsenko O.; Seravalli L.; Kozak O.; Trevisi G.; Frigeri P.; Babichuk I.S.; Golovynska I.; Qu J. | |
| Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening | 1-gen-2019 | Golovynskyi, Sergii; Datsenko Oleksandr, I; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Babichuk Ivan, S; Golovynska, Iuliia; Li, Baikui; Qu, Junle |