CNR Institutional Research Information System

VIRGILIO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 221
AS - Asia 50
EU - Europa 17
Totale 288
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Nazione #
US - Stati Uniti d'America 221
SG - Singapore 49
FI - Finlandia 13
AT - Austria 1
CN - Cina 1
DE - Germania 1
IT - Italia 1
NL - Olanda 1
Totale 288
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Città #
Santa Clara 210
Singapore 38
Helsinki 13
Falkenstein 1
Messina 1
Vienna 1
Totale 264
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Nome #
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/Si-Ge Quantum Cascade Structures 17
Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach. 12
Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells 12
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 11
Polarization-dependent absorption in Ge/SiGe multiple quantum wells: theory and experiment 11
Comparison of confinement characters between porous silicon and silicon nanowires 11
Theoretical investigation of near gap electronic states of Si/SiGe multiple quantum wells on (001)-Si or SiGe substrates 11
Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells 10
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shif 10
Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers 10
Confinement and interwell coupling effects in Ge double quantum wells pseudomorphic to a Si (001) substrate 10
Radiative recombination and optical gain spectra in biaxially strained n-type germanium 10
Conduction band intersubband transitions in Ge/SiGe quantum wells. 9
Physical mechanisms of intersubband-absorption linewidth broadening in s -Ge/SiGe quantum wells 9
CMOS-compatible optical switching concept based on strain-induced refractive-index tuning 9
Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells 9
Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes 9
Long intersubband relaxation times in n-type germanium quantum wells 9
Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices 9
Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates 9
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 9
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 9
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1-x quantum wells 8
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells. 8
Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells 8
Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description 8
Valley splitting and optical intersubband transitions at parallel and normal incidence in [001]-Ge/SiGe quantum wells. 8
Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures 8
Optical transitions between valley split subbands in biased Si quantum wells 8
Type-I alignment and direct fundamental gap in SiGe based heterostructures 8
Room Temperature Lattice Thermal Conductivity of GeSn Alloys 6
Totale 295
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Categoria #
all - tutte 1.064
article - articoli 1.064
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.128
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2024/2025295 1 9 44 17 187 34 3 0 0 0 0 0
Totale 295