FERRARI, CLAUDIO

FERRARI, CLAUDIO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 141 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autore(i) File
Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells 1-gen-2024 Arif, Omer; Canal, Laura; Ferrari, Elena; Ferrari, Claudio; Lazzarini, Laura; Nasi, Lucia; Paghi, Alessandro; Heun, Stefan; Sorba, Lucia
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates 1-gen-2024 Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R,
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes 1-gen-2022 Ferrari C.; Attolini G.; Bosi M.; Frigeri C.; Frigei P.; Gombia E.; Lazzarini L.; Rossi F.; Seravalli L.; Trevisi G.; Lolli R.; Aversa L.; Verucchi R.; Musayeva N.; Alizade M.; Quluzade S.; Oruyov T.; Sansone F.; Baldini L.; Rispoli F.
Germanium Nanowires as Sensing Devices: Modelization of Electrical Properties 1-gen-2021 Seravalli L.; Ferrari C.; Bosi M.
Compressive strain formation in surface-damaged crystals 1-gen-2020 Ferrari, Claudio; Beretta, Sara; Rotunno, Enzo; Korytar, Dusan; Zaprazny, Zdenko
Direct growth of germanium nanowires on glass 1-gen-2020 Beretta Matteo Bosi Luca Seravalli Paola Frigeri Giovanna Trevisi Enos Gombia Francesca Rossi Danilo Bersani, Sara; Ferrari, Claudio
Growth and functionalization of carbon nanotubes for nitroaromatic explosive detection 1-gen-2020 Musayeva, N; Orujov, T; Hasanov, R; Sultanov, Ch; Ferrari, C; Frigeri, C; Trevisi, G; Beretta, S; Bosi, M; Verucchi, R; Aversa, L; Sansone, F; Rispoli, F; Baldini, L
How the amount of copper influences the formation and stability of defects in CdTe solar cells 1-gen-2020 Artegiani, Elisa; D Major, Jonathan; Shiel, Huw; Dhanak, Vin; Ferrari, Claudio; Romeo, Alessandro
Orientation of germanium nanowires on germanium and silicon substrates for nanodevices 1-gen-2020 Beretta, S; Bosi, M; Seravalli, L; Musayeva, N; Ferrari, C
Characterization of ammonium dihydrogen phosphate crystals for soft X-ray optics of the Beam Expander Testing X-ray facility (BEaTriX) 1-gen-2019 Ferrari, Claudio; Beretta, Sara; Salmaso, Bianca; Pareschi, Giovanni; Tagliaferri, Gianpiero; Basso, Stefano; Spiga, Daniele; Pelliciari, Carlo; Giro, Enrico
Extra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures 1-gen-2019 Seravalli, L; Bosi, M; Beretta, S; Rossi, F; Bersani, D; Musayeva, N; Ferrari, C
Growth of germanium nanowires with isobuthyl germane 1-gen-2019 Bosi, Matteo; Seravalli, Luca; Beretta, Sara; Ferrari, Claudio
A study of extended defects in surface damaged crystals 1-gen-2018 Ferrari, C; Ghica, C; Rotunno, E
Cross-sectional TEM study of subsurface damage in SPDT machining of germanium optics 1-gen-2018 Korytar D.; Zaprazny Z.; Ferrari C.; Frigeri C.; Jergel M.; Matko I.; Keckes J.
A study on 3C-sic carbonization on misoriented si substrates: From research to production scale reactors 1-gen-2017 Bosi, M; Ferrari, C; Nilsson, D; Ward, P J
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy 1-gen-2017 Negri, Marco; Bosi, Matteo; Orsi, Davide; Rimoldi, Tiziano; Attolini, Giovanni; Buffagni, Elisa; Ferrari, Claudio; Cristofolini, Luigi; Salviati, Giancarlo
Thermal stability of ?-Ga2O3 polymorph 1-gen-2017 R Fornari; M Pavesi; V Montedoro; D Klimm; Francesco Mezzadri; Ildikó Cora; Béla Pécz; F Boschi; A Parisini; A Baraldi; C Ferrari; E Gombia; M Bosi
Thermal stability of epsilon-Ga2O3 polymorph 1-gen-2017 Fornari, R; Pavesi, M; Montedoro, V; Klimm, D; Mezzadri, F; Cora, I; Pecz, B; Boschi, F; Parisini, A; Baraldi, A; Ferrari, C; Gombia, E; Bosi, M
3C-SiC carbonization optimization and void reduction on misoriented Si substrates: from a research reactor to a production scale reactor 1-gen-2016 Bosi, M; Ferrari, C; Nilsson, D; Ward, P J
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition 1-gen-2016 Bosi, M.; Attolini, G.; Negri, M.; Ferrari, C.; Buffagni, E.; Frigeri, C.; Calicchio, M.; Pecz, B.; Riesz, F.; Cora, I.; Osvath, Z.; Jiang, L.; Borionetti, G.