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FRANCHI, SECONDO

FRANCHI, SECONDO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 146 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autore(i) File
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 1-gen-2007 Seravalli L.; Frigeri P.; Avanzini V.; Franchi S.
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 1-gen-2007 Seravalli L.; Frigeri P.; Allegri P.; Avanzini V.; Franchi S.
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 1-gen-2008 Seravalli L.; Frigeri P.; Trevisi G.; Franchi S.
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions 1-gen-1994 Horváth, Zsj; Bosacchi, A; Franchi, S; Gombia, E; Mosca, R; Motta, A
Be diffusion in molecular beam epitaxy-grown GaAs structures 1-gen-2003 Mosca, R; Bussei, P; Franchi, S; Frigeri, P; Gombia, E; Carnera, A; Peroni, M
Carrier thermal escape and retrapping in self-assembled quantum dots 1-gen-1999 S, Sanguinetti; M, Henini; Mg, Alessi; P Frigeri, Capizzi M; Franchi, S
Carrier thermodynamics in InAs/InxGa1-xAs quantum dots 1-gen-2006 Sanguinetti S.; Colombo D.; Guzzi M.;Grilli E.; Gurioli M.; Seravalli L.; Frigeri P.;Franchi S.
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 1-gen-2000 Sanguinetti; S.a;Padovani; M.a;Gurioli; M.a;Grilli; E.a;Guzzi; M.a;Vinattieri; A.b;Colocci; M.b;Frigeri; P.c;Franchi; S.c
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 1-gen-2006 Gurioli, M.; Zamfirescu, M.; Vinattieri, A.; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Mazzucato, S.; Polimeni, A.; Capizzi, M.; Seravalli, L.; Frigeri, P.; Franchi, S.
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs 1-gen-1994 Baraldi, A; Frigeri, P; Ghezzi, C; Parisini, A; Bosacch, A; Franchi, S; Gombia, E; Mosca, R
Competition in the carrier capture between ingaas/algaas quantum dots and deep point defects 1-gen-2002 Altieri P.; Gurioli M.; Sanguinetti S.; Grilli E.; Guzzi M.; Franchi S.
Control of the n-type doping in AlxGa1-xSb: DX-center behavior of the Te impurity 1-gen-1997 Baraldi, A; Colonna, F; Covucci, G; Ghezzi, C; Magnanini, R; Parisini, A; Tarricone, L; Bosacchi, A; Franchi, S
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering 1-gen-1999 Colocci, M; Vinattieri, A; Lippi, L; Bogani, F; RosaClot, M; Taddei, S; Bosacchi, A; Franchi, S; Frigeri, P
Current instabilities in gaas/inas self-aggregated quantum dot structures 1-gen-2002 Horvath Zs.J.; Frigeri P.; Franchi S.; Van Tuyen V.; Gombia E.; Mosca R.; Dszsa L.
Deep level investigation on n-In0.35Ga0.65As/GaAs structures 1-gen-1998 Gombia, E; Mosca, R; Pal, D; Motta, A; Nasi, L; Bosacchi, A; Franchi, Secondo; S,
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy 1-gen-1994 Bosacchi, A; Gombia, E; Madella, M; Mosca, R; Franchi, S
Deep levels in GaAs grown by atomic layer molecular beam epitaxy 1-gen-1994 Gombia, E; Mosca, R; Bosacchi, A; Madellaf, M; Franchi, S
Deep levels in virtually unstrained InGaAs layers deposited on GaAs 1-gen-1998 D. Pal; E. Gombia; R. Mosca; A. Bosacchi;S. Franchi
Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures 1-gen-2002 Horvath, Zsj; Franchi, S; Bosacchi, A; Frigeri, P; Gombia, E; Mosca, R; Van Tuyen, V
Defects in nanostructures with ripened InAs/GaAs quantum dots 1-gen-2008 Nasi L.; Bocchi C.; Germini F.; Prezioso M.; Gombia E.; Mosca R.; Frigeri P.; Trevisi G.; Seravalli L.; Franchi S.