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FRANCHI, SECONDO

FRANCHI, SECONDO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 146 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autore(i) File
Update of "Molecular Beam Epitaxy: An Overview" 1-gen-2016 P Frigeri; L Seravalli; G Trevisi;S Franchi
Molecular beam epitaxy: fundamentals, historical background and future prospects 1-gen-2013 Franchi, Secondo
Molecular beam epitaxy: an overview 1-gen-2011 P. Frigeri; L. Seravalli; G. Trevisi; S. Franchi
Raman scattering in InAs/AlGaAs quantum dot nanostructures 1-gen-2011 Giulotto, E; Geddo, M; S Grandi, M; Guizzetti, G; Trevisi, G; Seravalli, L; Frigeri, P; Franchi, S
Low Density Metamorphic Quantum Dot structures with emission in the 1.3 - 1.55 µm window. 1-gen-2010 Seravalli, L; Trevisi, G; Frigeri, P; Franchi, S; Bocchi, C
Thermal activated carrier transfer between InAs quantum dots in very low density samples 1-gen-2010 MartínezPastor J.; MuñozMatutano G.; Alén B.; CanetFerrer J.; Fuster D.; Trevisi G.; Seravalli L.; Frigeri P.; Franchi S.
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs 1-gen-2009 Rimada, J; Prezioso, M; Nasi, L; Gombia, E; Mosca, R; Trevisi, G; Seravalli, L; Frigeri, P; Bocchi, C; Franchi, S
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots 1-gen-2009 Hastas, N A; Dimitriadis, C; Gombia, E; Frigeri, P; Franchi, S; Mosca, R
Low density InAs/(In)GaAs quantum dots emitting at long wavelength 1-gen-2009 Trevisi G.; Seravalli L.; Frigeri P.; Franchi S.
Low density InAs/(In)GaAs quantum dots emitting at long wavelengths 1-gen-2009 Trevisi G.; Seravalli L.; Frigeri P.; Franchi S.
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission 1-gen-2009 Trevisi G.; Seravalli L.; Frigeri P.; Prezioso M.; Rimada Herrera J. C.; Gombia E.; Mosca R.; Nasi L.; Bocchi C.; Franchi S.
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 1-gen-2009 Seravalli, L; Trevisi, G; Frigeri, P; Franchi, S; Geddo, M; Guizzetti, G
THERMAL ACTIVATED CARRIER TRANSFER BETWEEN InAs QUANTUM DOTS IN VERY LOW DENSITY SAMPLES 1-gen-2009 Munozmatutano, G; Canetferrer, J; Alen, B; Fuster, D; Martinezpastor, J; Seravalli, L; Frigeri, P; Franchi, S
1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates 1-gen-2008 Seravalli L.; Frigeri P.; Trevisi G.; Franchi S.
Defects in nanostructures with ripened InAs/GaAs quantum dots 1-gen-2008 Nasi L.; Bocchi C.; Germini F.; Prezioso M.; Gombia E.; Mosca R.; Frigeri P.; Trevisi G.; Seravalli L.; Franchi S.
Electrical and structural characterization of InAs/InGaAs quantum dot structures 1-gen-2008 Rimada Herrera, J C; Prezioso, M; Nasi, L; Gombia, E; Mosca, R; Trevisi, G; Seravalli, L; Frigeri, P; Bocchi, C; Franchi, S
Engineering of Quantum Dot Nanostructures for Photonic Devices 1-gen-2008 Seravalli, L; Trevisi, G; Minelli, M; Frigeri, P; Franchi, S
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping 1-gen-2008 MunozMatutano G.; Gomis J.; Alen B.; MartinezPastor J.; Seravalli L.; Frigeri P.; Franchi S.
InGaAs/AlGaAs Quantum Dot Nanostructures for 980 nm Operation 1-gen-2008 Trevisi, G; Frigeri, P; Minelli, M; Franchi, S
Modelling of exciton and trion recombination in single quantum dots under selective optical pumping 1-gen-2008 Munozmatutano, G; Gomis, J; Alen, B; Martinezpastor, J; Seravalli, L; Frigeri, P; Franchi, S