MANNINO, GIOVANNI
MANNINO, GIOVANNI
Istituto per la Microelettronica e Microsistemi - IMM
Advanced organic molecular doping applied to Si: influence of the processing conditions on the electrical properties
2018 Caccamo, Sebastiano; Grazia Grimaldi, Maria; Italia, Markus; LA MAGNA, Antonino; Mannino, Giovanni; A Puglisi, Rosaria
An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon
2001 Mannino G; Whelan S; Schroer E; Privitera V; Leveque P; Svensson BG; Napolitani E
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
1999 Privitera, V; Napolitani, E; Priolo, F; Moffatt, S; La Magna, A; Mannino, G; Carnera, A; Picariello, A
Bimodal Porosity and Stability of a TiO2 Gig-Lox Sponge Infiltrated with Methyl-Ammonium Lead Iodide Perovskite
2019 Sanzaro, Salvatore; Zontone, Federico; Grosso, David; Bottein, Thomas; Neri, Fortunato; Smecca, Emanuele; Mannino, Giovanni; Bongiorno, Corrado; Spinella, Corrado; LA MAGNA, Antonino; Alberti, Alessandra
Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation
2008 Mannino G; La Magna A; Privitera V; Christensen JS; Vines L; Svensson BG
Boron-Interstitial cluster kinetics: extraction of binding energies from dedicated experiments
2004 Ortiz, Cj; Pichler, P; Haublein, V; Mannino, G; Scalese, S; Privitera, V; Solmi, S; Lerch, W
Chemical Vapor Deposition Growth of Silicon Nanowires with Diameter Smaller Than 5 nm
2019 A Puglisi, Rosaria; Bongiorno, Corrado; Caccamo, Sebastiano; Fazio, Enza; Mannino, Giovanni; Neri, Fortunato; Scalese, Silvia; Spucches, Daniele; LA MAGNA, Antonino
Cluster ripening and transient enhanced diffusion in silicon
1999 Cowern, Neb; Mannino, G; Stolk, Pa; Roozeboom, F; Huizing, Hga; van Berkum, Jgm; Cristiano, F; Claverie, A; Jaraiz, M
Competition between uncatalyzed and catalyzed growth during the plasma synthesis of Si nanowires and its role on their optical properties
2013 C. Garozzo; A. La Magna; G. Mannino; V. Privitera; S. Scalese; P. M. Sberna; F. Simone;R. A. Puglisi
Computational methods for the simulation of the excimer laser annealing in MOS technology
2004 La Magna, A; Alippi, P; Mannino, G; Privitera, V; Fortunato, G; Mariucci, L; Camalleri, M; Monakhov, E; Svensson, B
Controlled Al3+ Incorporation in the ZnO Lattice at 188 degrees C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides
2016 Sanzaro, Salvatore; La Magna, Antonino; Smecca, Emanuele; Mannino, Giovanni; Pellegrino, Giovanna; Fazio, Enza; Neri, Fortunato; Alberti, Alessandra
Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation
2011 Ruggeri R; Privitera V; Spinella C; Fazio E; Neri F; De Bastiani R; Grimaldi MG; Di Stefano MA; Di Marco S; Mannino G
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation
2010 Mannino, G; Spinella, C; Ruggeri, R; La Magna, A; Fisicaro, G; Fazio, E; Neri, F; Privitera, V
Defect and dopant kinetics in laser anneals of Si
2008 La Magna, A; Fisicaro, G; Mannino, G; Privitera, V; Piccitto, G; Svensson, Bg; Vines, L
Defect generation and evolution in laser processing of Si
2007 La Magna A; Privitera V; Mannino G; Fortunato G; Cuscuna M; Svensson BG; Monakhov E; Kuitunen K; Slotte J; Tuomisto F
Defects and diffusion in silicon: An overview
1999 Cowern, Neb; Mannino, G; Stolk, Pa; Theunissen, Mjj
Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose
2002 Solmi, S; Mannino, G; Servidori, M; Bersani, M; Mancini, L; Milita, S; Privitera, V; Anderle, M
Depth distribution of B implanted in Si after excimer laser irradiation
2005 Mannino, G; Privitera, V; La Magna, A; Rimini, E; Napolitani, E; Fortunato, G; Mariucci, L
Depth profiles of vacancy- and interstitial-type defects in MeV implanted Si
1997 Coffa, S; Privitera, V; Priolo, F; Libertino, S; Mannino, G
Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument
2000 Napolitani, E; Carnera, A; Storti, R; Privitera, V; Priolo, F; Mannino, G; Moffatt, S
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Advanced organic molecular doping applied to Si: influence of the processing conditions on the electrical properties | 1-gen-2018 | Caccamo, Sebastiano; Grazia Grimaldi, Maria; Italia, Markus; LA MAGNA, Antonino; Mannino, Giovanni; A Puglisi, Rosaria | |
| An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon | 1-gen-2001 | Mannino G; Whelan S; Schroer E; Privitera V; Leveque P; Svensson BG; Napolitani E | |
| Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon | 1-gen-1999 | Privitera, V; Napolitani, E; Priolo, F; Moffatt, S; La Magna, A; Mannino, G; Carnera, A; Picariello, A | |
| Bimodal Porosity and Stability of a TiO2 Gig-Lox Sponge Infiltrated with Methyl-Ammonium Lead Iodide Perovskite | 1-gen-2019 | Sanzaro, Salvatore; Zontone, Federico; Grosso, David; Bottein, Thomas; Neri, Fortunato; Smecca, Emanuele; Mannino, Giovanni; Bongiorno, Corrado; Spinella, Corrado; LA MAGNA, Antonino; Alberti, Alessandra | |
| Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation | 1-gen-2008 | Mannino G; La Magna A; Privitera V; Christensen JS; Vines L; Svensson BG | |
| Boron-Interstitial cluster kinetics: extraction of binding energies from dedicated experiments | 1-gen-2004 | Ortiz, Cj; Pichler, P; Haublein, V; Mannino, G; Scalese, S; Privitera, V; Solmi, S; Lerch, W | |
| Chemical Vapor Deposition Growth of Silicon Nanowires with Diameter Smaller Than 5 nm | 1-gen-2019 | A Puglisi, Rosaria; Bongiorno, Corrado; Caccamo, Sebastiano; Fazio, Enza; Mannino, Giovanni; Neri, Fortunato; Scalese, Silvia; Spucches, Daniele; LA MAGNA, Antonino | |
| Cluster ripening and transient enhanced diffusion in silicon | 1-gen-1999 | Cowern, Neb; Mannino, G; Stolk, Pa; Roozeboom, F; Huizing, Hga; van Berkum, Jgm; Cristiano, F; Claverie, A; Jaraiz, M | |
| Competition between uncatalyzed and catalyzed growth during the plasma synthesis of Si nanowires and its role on their optical properties | 1-gen-2013 | C. Garozzo; A. La Magna; G. Mannino; V. Privitera; S. Scalese; P. M. Sberna; F. Simone;R. A. Puglisi | |
| Computational methods for the simulation of the excimer laser annealing in MOS technology | 1-gen-2004 | La Magna, A; Alippi, P; Mannino, G; Privitera, V; Fortunato, G; Mariucci, L; Camalleri, M; Monakhov, E; Svensson, B | |
| Controlled Al3+ Incorporation in the ZnO Lattice at 188 degrees C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides | 1-gen-2016 | Sanzaro, Salvatore; La Magna, Antonino; Smecca, Emanuele; Mannino, Giovanni; Pellegrino, Giovanna; Fazio, Enza; Neri, Fortunato; Alberti, Alessandra | |
| Crystallization of Deposited Amorphous Silicon by Infrared Laser Irradiation | 1-gen-2011 | Ruggeri R; Privitera V; Spinella C; Fazio E; Neri F; De Bastiani R; Grimaldi MG; Di Stefano MA; Di Marco S; Mannino G | |
| Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation | 1-gen-2010 | Mannino, G; Spinella, C; Ruggeri, R; La Magna, A; Fisicaro, G; Fazio, E; Neri, F; Privitera, V | |
| Defect and dopant kinetics in laser anneals of Si | 1-gen-2008 | La Magna, A; Fisicaro, G; Mannino, G; Privitera, V; Piccitto, G; Svensson, Bg; Vines, L | |
| Defect generation and evolution in laser processing of Si | 1-gen-2007 | La Magna A; Privitera V; Mannino G; Fortunato G; Cuscuna M; Svensson BG; Monakhov E; Kuitunen K; Slotte J; Tuomisto F | |
| Defects and diffusion in silicon: An overview | 1-gen-1999 | Cowern, Neb; Mannino, G; Stolk, Pa; Theunissen, Mjj | |
| Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose | 1-gen-2002 | Solmi, S; Mannino, G; Servidori, M; Bersani, M; Mancini, L; Milita, S; Privitera, V; Anderle, M | |
| Depth distribution of B implanted in Si after excimer laser irradiation | 1-gen-2005 | Mannino, G; Privitera, V; La Magna, A; Rimini, E; Napolitani, E; Fortunato, G; Mariucci, L | |
| Depth profiles of vacancy- and interstitial-type defects in MeV implanted Si | 1-gen-1997 | Coffa, S; Privitera, V; Priolo, F; Libertino, S; Mannino, G | |
| Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument | 1-gen-2000 | Napolitani, E; Carnera, A; Storti, R; Privitera, V; Priolo, F; Mannino, G; Moffatt, S |