ITALIA, MARKUS
ITALIA, MARKUS
Istituto per la Microelettronica e Microsistemi - IMM
A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method
2015 Puglisi Rosaria, A; Caccamo, Sebastiano; D'Urso, Luisa; Fisichella, Gabriele; Giannazzo, Filippo; Italia, Markus; LA MAGNA, Antonino
Advanced organic molecular doping applied to Si: influence of the processing conditions on the electrical properties
2018 Caccamo, Sebastiano; Grazia Grimaldi, Maria; Italia, Markus; LA MAGNA, Antonino; Mannino, Giovanni; A Puglisi, Rosaria
Array of nanofibrous polyaniline-based sensors with different chemo-structural assembling
2009 Macagnano, A; Zampetti, E; Pantalei, S; Italia, M; Spinella, C; Bearzotti, A
BORON DISTRIBUTION IN SILICON AFTER EXCIMER LASER ANNEALING WITH MULTIPLE PULSES
2005 Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; LA MAGNA, Antonino; Italia, M; Privitera, V; Fortunato, G; Mariucci, L
Boron distribution in silicon after excimer laser annealing with multiple pulses
2005 Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; La Magna, A; Italia, M; Privitera, V; Fortunato, G; Cuscuna, M; Mariucci, L
Boron distribution in silicon after multiple pulse excimer laser annealing
2005 Monakhov E.V.; Svensson B.G.; Linnarsson M.K.; La Magna A.; Italia M.; Privitera V.; Fortunato G.; Cuscuna M.; Mariucci L.
Bow in 6 inch high-quality off-axis (111) 3C-SiC films
2010 Severino A; Camarda M; Piluso N; Italia M; Condorelli G; Mauceri M; Abbondanza G; La Via F
Diffusion and electrical activation of indium in silicon
2003 Scalese, S; Italia, M; La Magna, A; Mannino, G; Privitera, V; Bersani, M; Giubertoni, D; Barozzi, M; Solmi, S; Pichler, P
Dopant behaviour and damage annealing in silicon implanted with 1 kev arsenic
2002 Whelan, S; Privitera, V; Mannino, G; Italia, M; Bongiorno, C; Napolitani, E; Collart, Ejh; Van Den Berg, Ja
Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing.
2003 Whelan, S; La Magna, A; Privitera, V; Mannino, G; Italia, M; Bongiorno, C; Fortunato, G; Mariucci, L
Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers
2004 Ottaviano, L; Italia, M; Mannino, G; Privitera, V; Herden, M; Feudel, T
Electrical activation of ultralow energy As implants in Si
2001 Whelan S; Privitera V; Mannino G; Italia M; Bongiorno C; La Magna A; Napolitani E
Electrical activation phenomena induced by excimer laser annealing in B-implanted silicon
2004 Fortunato, G; Mariucci, L; La Magna, A; Alippi, P; Italia, M; Privitera, V; Svensson, B; Monakhov, E
Electrospun polymer nanofibres towards diagnostic devices
2009 Macagnano A; Zampetti E; Spinella C; Pantalei S; Italia M; Bearzotti A
Excimer laser annealing of B and BF2 implanted Si
2005 Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; La Magna, A; Italia, M; Privitera, V; Fortunato, G; Cuscuna, M; Mariucci, L
EXCIMER LASER ANNEALING OF B AND BF2 IMPLANTED Si
2005 Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; LA MAGNA, Antonino; Italia, M; Privitera, V; Fortunato, G; Mariucci, L
Excimer Laser Annealing of Ion-implanted Silicon: Dopant Activation, Diffusion and Defect Formation
2007 V Monakhov, E; G Svensson, B; LA MAGNA, Antonino; Alippi, P; Italia, M; Privitera, V; Fortunato, G; Mariucci, L; Tumisto, F; Kuitunen, K
Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation
2007 Monakhov, Ev; Svensson, Bg; La Magna, A; Alippi, P; Italia, M; Privitera, V; Fortunato, G; Mariucci, L; Tumisto, F; Kuitunen, K
Experimental determination of the local geometry around In and In-C complexes in Si
2006 D'Acapito, F; Shimizu, Y; Scalese, S; Italia, M; Alippi, P; Grasso, S
Experimental determination of the local geometry around of In atoms and In-C complexes in Si
2006 D'Acapito, F; Shimizu, Y; Scalese, S; Italia, M; Alippi, P; Grasso, S; Privitera, V
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method | 1-gen-2015 | Puglisi Rosaria, A; Caccamo, Sebastiano; D'Urso, Luisa; Fisichella, Gabriele; Giannazzo, Filippo; Italia, Markus; LA MAGNA, Antonino | |
| Advanced organic molecular doping applied to Si: influence of the processing conditions on the electrical properties | 1-gen-2018 | Caccamo, Sebastiano; Grazia Grimaldi, Maria; Italia, Markus; LA MAGNA, Antonino; Mannino, Giovanni; A Puglisi, Rosaria | |
| Array of nanofibrous polyaniline-based sensors with different chemo-structural assembling | 1-gen-2009 | Macagnano, A; Zampetti, E; Pantalei, S; Italia, M; Spinella, C; Bearzotti, A | |
| BORON DISTRIBUTION IN SILICON AFTER EXCIMER LASER ANNEALING WITH MULTIPLE PULSES | 1-gen-2005 | Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; LA MAGNA, Antonino; Italia, M; Privitera, V; Fortunato, G; Mariucci, L | |
| Boron distribution in silicon after excimer laser annealing with multiple pulses | 1-gen-2005 | Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; La Magna, A; Italia, M; Privitera, V; Fortunato, G; Cuscuna, M; Mariucci, L | |
| Boron distribution in silicon after multiple pulse excimer laser annealing | 1-gen-2005 | Monakhov E.V.; Svensson B.G.; Linnarsson M.K.; La Magna A.; Italia M.; Privitera V.; Fortunato G.; Cuscuna M.; Mariucci L. | |
| Bow in 6 inch high-quality off-axis (111) 3C-SiC films | 1-gen-2010 | Severino A; Camarda M; Piluso N; Italia M; Condorelli G; Mauceri M; Abbondanza G; La Via F | |
| Diffusion and electrical activation of indium in silicon | 1-gen-2003 | Scalese, S; Italia, M; La Magna, A; Mannino, G; Privitera, V; Bersani, M; Giubertoni, D; Barozzi, M; Solmi, S; Pichler, P | |
| Dopant behaviour and damage annealing in silicon implanted with 1 kev arsenic | 1-gen-2002 | Whelan, S; Privitera, V; Mannino, G; Italia, M; Bongiorno, C; Napolitani, E; Collart, Ejh; Van Den Berg, Ja | |
| Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing. | 1-gen-2003 | Whelan, S; La Magna, A; Privitera, V; Mannino, G; Italia, M; Bongiorno, C; Fortunato, G; Mariucci, L | |
| Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers | 1-gen-2004 | Ottaviano, L; Italia, M; Mannino, G; Privitera, V; Herden, M; Feudel, T | |
| Electrical activation of ultralow energy As implants in Si | 1-gen-2001 | Whelan S; Privitera V; Mannino G; Italia M; Bongiorno C; La Magna A; Napolitani E | |
| Electrical activation phenomena induced by excimer laser annealing in B-implanted silicon | 1-gen-2004 | Fortunato, G; Mariucci, L; La Magna, A; Alippi, P; Italia, M; Privitera, V; Svensson, B; Monakhov, E | |
| Electrospun polymer nanofibres towards diagnostic devices | 1-gen-2009 | Macagnano A; Zampetti E; Spinella C; Pantalei S; Italia M; Bearzotti A | |
| Excimer laser annealing of B and BF2 implanted Si | 1-gen-2005 | Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; La Magna, A; Italia, M; Privitera, V; Fortunato, G; Cuscuna, M; Mariucci, L | |
| EXCIMER LASER ANNEALING OF B AND BF2 IMPLANTED Si | 1-gen-2005 | Monakhov, Ev; Svensson, Bg; Linnarsson, Mk; LA MAGNA, Antonino; Italia, M; Privitera, V; Fortunato, G; Mariucci, L | |
| Excimer Laser Annealing of Ion-implanted Silicon: Dopant Activation, Diffusion and Defect Formation | 1-gen-2007 | V Monakhov, E; G Svensson, B; LA MAGNA, Antonino; Alippi, P; Italia, M; Privitera, V; Fortunato, G; Mariucci, L; Tumisto, F; Kuitunen, K | |
| Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation | 1-gen-2007 | Monakhov, Ev; Svensson, Bg; La Magna, A; Alippi, P; Italia, M; Privitera, V; Fortunato, G; Mariucci, L; Tumisto, F; Kuitunen, K | |
| Experimental determination of the local geometry around In and In-C complexes in Si | 1-gen-2006 | D'Acapito, F; Shimizu, Y; Scalese, S; Italia, M; Alippi, P; Grasso, S | |
| Experimental determination of the local geometry around of In atoms and In-C complexes in Si | 1-gen-2006 | D'Acapito, F; Shimizu, Y; Scalese, S; Italia, M; Alippi, P; Grasso, S; Privitera, V |