Growth of single crystal 3C-SiC films on large area off-axis (1111) Si substrate by chemical vapour deposition technique is here reported. The growth was conducted on off-axis Si substrates due to the ability of the misorientation to reduce anti-phase disorder in the 3C-SiC film. 3C-SiC films show an extremely flat surface and interface, stimulating further interest for electrical and mechanical device applications even if a very strong bow, due to the strain induced by the growth process, is observed. Film quality was proved to be high by several investigation techniques and a study of the crystalline defects is also presented. Optical profilometer measurements were also conducted to evaluate accurately the asymmetric curvature of the whole system.
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
Bongiorno C;Italia M;La Magna A;La Via F
2010
Abstract
Growth of single crystal 3C-SiC films on large area off-axis (1111) Si substrate by chemical vapour deposition technique is here reported. The growth was conducted on off-axis Si substrates due to the ability of the misorientation to reduce anti-phase disorder in the 3C-SiC film. 3C-SiC films show an extremely flat surface and interface, stimulating further interest for electrical and mechanical device applications even if a very strong bow, due to the strain induced by the growth process, is observed. Film quality was proved to be high by several investigation techniques and a study of the crystalline defects is also presented. Optical profilometer measurements were also conducted to evaluate accurately the asymmetric curvature of the whole system.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
