TAMARRI, FABRIZIO
TAMARRI, FABRIZIO
Istituto per la Microelettronica e Microsistemi - IMM
Experimental analysis and simulation of the optical properties of gold nano-particles on sodium alginate
2022 Summonte, Caterina; Maurizi, Alberto; Rizzoli, Rita; Tamarri, Fabrizio; Bertoldo, Monica; Bolognini, Gabriele; Maccagnani, Piera
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
2009 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R; Tamarri, F; Pizzochero, G
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes
2009 Moscatelli, Francesco; Bergamini, Fabio; Poggi, Antonella; Passini, Mara; Tamarri, Fabrizio; Bianconi, Marco; Nipoti, Roberta
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes
2009 Moscatelli, F; Bergamini, F; Poggi, A; Passini, M; Tamarri, F; Bianconi, M; Nipoti, R
An improved detection system for low energy Scanning Transmission Electron Microscopy
2008 Morandi, V; Migliori, A; Maccagnani, P; Tamarri, F; Ferroni, M
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
2007 Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R
Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor
2006 Bergamini, F; Rao, S P; Poggi, A; Tamarri, F; Saddow, Se; Nipoti, R
Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor
2006 Bergamini, ; Fabio, ; Rao, ; Shailaja, P; Poggi, Antonella; Poggi, Antonella; Tamarri, Fabrizio; Tamarri, Fabrizio; Saddow, ; Stephen, E; Nipoti, Roberta; Nipoti, Roberta
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines
1996 A Scorzoni; I De Munari; R Balboni; F Tamarri; A Garulli; F Fantini
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Experimental analysis and simulation of the optical properties of gold nano-particles on sodium alginate | 1-gen-2022 | Summonte, Caterina; Maurizi, Alberto; Rizzoli, Rita; Tamarri, Fabrizio; Bertoldo, Monica; Bolognini, Gabriele; Maccagnani, Piera | |
| Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET | 1-gen-2009 | Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R; Tamarri, F; Pizzochero, G | |
| Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes | 1-gen-2009 | Moscatelli, Francesco; Bergamini, Fabio; Poggi, Antonella; Passini, Mara; Tamarri, Fabrizio; Bianconi, Marco; Nipoti, Roberta | |
| Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes | 1-gen-2009 | Moscatelli, F; Bergamini, F; Poggi, A; Passini, M; Tamarri, F; Bianconi, M; Nipoti, R | |
| An improved detection system for low energy Scanning Transmission Electron Microscopy | 1-gen-2008 | Morandi, V; Migliori, A; Maccagnani, P; Tamarri, F; Ferroni, M | |
| Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose | 1-gen-2007 | Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R | |
| Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor | 1-gen-2006 | Bergamini, F; Rao, S P; Poggi, A; Tamarri, F; Saddow, Se; Nipoti, R | |
| Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor | 1-gen-2006 | Bergamini, ; Fabio, ; Rao, ; Shailaja, P; Poggi, Antonella; Poggi, Antonella; Tamarri, Fabrizio; Tamarri, Fabrizio; Saddow, ; Stephen, E; Nipoti, Roberta; Nipoti, Roberta | |
| Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines | 1-gen-1996 | A Scorzoni; I De Munari; R Balboni; F Tamarri; A Garulli; F Fantini |