MODESTI, SILVIO
MODESTI, SILVIO
Anisotropic ordered planar growth of ?-Sexithienyl thin films
1999 Prato, S; Floreano, L; Cvetko, D; De Renzi, V; Morgante, A; Modesti, S; Taliani, C; Zamboni, R; Biscarini, F
Brillouin-scattering determination of the elastic constants of epitaxial fcc C60 film
1995 Fioretto, D; Carlotti, G; Socino, G; Modesti, S; Cepek, C; Giovannini, L; Donzelli, O; Nizzoli, F
Chemisorption and fragmentation of C60 on Pt(111) and Ni(110)
1996 Cepek, C; Goldoni, A; Modesti, S
Completamento sistema STM in UHV operante a 5 K
2006 G. Ceballos; S. Heun; S. Modesti
Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces
2007 Stroppa, A; Duan, X; Peressi, M; Furlanetto, D; Modesti, S
Correction of systematic errors in scanning tunneling spectra on semiconductor surfaces: The energy gap of Si(111)- 7×7 at 0.3 K
2009 Modesti, S; Gutzmann, H; Wiebe, J; Wiesendanger, R
Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide
2006 Xiangmei Duan; Stefano Baroni; Silvio Modesti; Maria Peressi
Determination of the (3x3)-Sn/Ge(111) structure by photoelectron diffraction
2001 Petaccia, L; Floreano, L; Benes, M; Cvetko, D; Goldoni, A; Grill, L; Morgante, A; Verdini, A; Modesti, S
Dispersion and intrinsic width of image resonances measured by resonant inelastic electron scattering: the ? phase of Pb/Ge(111)
1999 L. Petaccia; L. Grill; M. Zangrando; S. Modesti
Doping of epitaxial graphene by direct incorporation of nickel adatoms
2019 Carnevali, V; Patera, Ll; Prandini, G; Jugovac, M; Modesti, S; Comelli, G; Peressi, M; Africh, C
Dynamics of the Si(100) surface
1997 Gavioli, L; Betti, Mg; Mariani, C; Shkrebtii, Ai; Del Sole, R; Cepek, C; Goldoni, A; Modesti, S
Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains
2023 Colja, Matija; Cautero, Marco; Arfelli, Fulvia; Bertolo, Michele; Biasiol, Giorgio; Dal Zilio, Simone; Driussi, Francesco; Menk, Ralf Hendrik; Modesti, Silvio; Palestri, Pierpaolo; Pilotto, Alessandro; Cautero, Giuseppe
First-order orientational-disordering transition on the (111) surface of C60
1996 Goldoni, A; Cepek, C; Modesti, S
High spatial resolution studies of microscopic capacitors in GaAs
2001 Furlanetto, D; Orani, D; Rubini, S; Modesti, S; Carlino, E; Franciosi, A
High-excitation luminescence in direct-GAP GaAs1-xPx: E-H plasma expansion effects
1981 Modesti, S; G Quagliano, L; Afrova, ; Staehli, Jl; Guzzi, M
In-N and N-N correlation in InxGa1-xAs1-yNy/GaAs quasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study
2005 Duca, R; Ceballos, G; Nacci, C; Furlanetto, D; Finetti, P; Modesti, S; Cristofoli, A; Bais, G; Piccin, M; Rubini, S; Martelli, F; Franciosi, A
Insulating ground state of Sn/Si(111)-(root 3x root 3)R30 degrees
2007 Modesti, S; Petaccia, L; Ceballos, G; Vobornik, I; Panaccione, G; Rossi, G; Ottaviano, L; Larciprete, R; Lizzit, S; Goldoni, A
Low-temperature insulating phase of the $mathrmSi(111)--7ifmmodetimeselse?fi7$ surface
2020 Modesti S;Sheverdyaeva; P M;Moras P;Carbone C;Caputo M;Marsi M;Tosatti E;Profeta; G
Microscopic and spectroscopic characterization of paintbrush-like single-walled carbon nanotubes
2006 Bonifazi, D; Nacci, C; Marega, R; Campidelli, S; Ceballos, G; Modesti, S; Meneghetti, M; Prato, M
Microscopic Mechanisms of Self-Compensation in Si delta-doped GaAs
2004 S. Modesti; R. Duca; P. Finetti; G. Ceballos;M. Piccin; S. Rubini; A. Franciosi
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Anisotropic ordered planar growth of ?-Sexithienyl thin films | 1-gen-1999 | Prato, S; Floreano, L; Cvetko, D; De Renzi, V; Morgante, A; Modesti, S; Taliani, C; Zamboni, R; Biscarini, F | |
Brillouin-scattering determination of the elastic constants of epitaxial fcc C60 film | 1-gen-1995 | Fioretto, D; Carlotti, G; Socino, G; Modesti, S; Cepek, C; Giovannini, L; Donzelli, O; Nizzoli, F | |
Chemisorption and fragmentation of C60 on Pt(111) and Ni(110) | 1-gen-1996 | Cepek, C; Goldoni, A; Modesti, S | |
Completamento sistema STM in UHV operante a 5 K | 1-gen-2006 | G. Ceballos; S. Heun; S. Modesti | |
Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces | 1-gen-2007 | Stroppa, A; Duan, X; Peressi, M; Furlanetto, D; Modesti, S | |
Correction of systematic errors in scanning tunneling spectra on semiconductor surfaces: The energy gap of Si(111)- 7×7 at 0.3 K | 1-gen-2009 | Modesti, S; Gutzmann, H; Wiebe, J; Wiesendanger, R | |
Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide | 1-gen-2006 | Xiangmei Duan; Stefano Baroni; Silvio Modesti; Maria Peressi | |
Determination of the (3x3)-Sn/Ge(111) structure by photoelectron diffraction | 1-gen-2001 | Petaccia, L; Floreano, L; Benes, M; Cvetko, D; Goldoni, A; Grill, L; Morgante, A; Verdini, A; Modesti, S | |
Dispersion and intrinsic width of image resonances measured by resonant inelastic electron scattering: the ? phase of Pb/Ge(111) | 1-gen-1999 | L. Petaccia; L. Grill; M. Zangrando; S. Modesti | |
Doping of epitaxial graphene by direct incorporation of nickel adatoms | 1-gen-2019 | Carnevali, V; Patera, Ll; Prandini, G; Jugovac, M; Modesti, S; Comelli, G; Peressi, M; Africh, C | |
Dynamics of the Si(100) surface | 1-gen-1997 | Gavioli, L; Betti, Mg; Mariani, C; Shkrebtii, Ai; Del Sole, R; Cepek, C; Goldoni, A; Modesti, S | |
Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains | 1-gen-2023 | Colja, Matija; Cautero, Marco; Arfelli, Fulvia; Bertolo, Michele; Biasiol, Giorgio; Dal Zilio, Simone; Driussi, Francesco; Menk, Ralf Hendrik; Modesti, Silvio; Palestri, Pierpaolo; Pilotto, Alessandro; Cautero, Giuseppe | |
First-order orientational-disordering transition on the (111) surface of C60 | 1-gen-1996 | Goldoni, A; Cepek, C; Modesti, S | |
High spatial resolution studies of microscopic capacitors in GaAs | 1-gen-2001 | Furlanetto, D; Orani, D; Rubini, S; Modesti, S; Carlino, E; Franciosi, A | |
High-excitation luminescence in direct-GAP GaAs1-xPx: E-H plasma expansion effects | 1-gen-1981 | Modesti, S; G Quagliano, L; Afrova, ; Staehli, Jl; Guzzi, M | |
In-N and N-N correlation in InxGa1-xAs1-yNy/GaAs quasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study | 1-gen-2005 | Duca, R; Ceballos, G; Nacci, C; Furlanetto, D; Finetti, P; Modesti, S; Cristofoli, A; Bais, G; Piccin, M; Rubini, S; Martelli, F; Franciosi, A | |
Insulating ground state of Sn/Si(111)-(root 3x root 3)R30 degrees | 1-gen-2007 | Modesti, S; Petaccia, L; Ceballos, G; Vobornik, I; Panaccione, G; Rossi, G; Ottaviano, L; Larciprete, R; Lizzit, S; Goldoni, A | |
Low-temperature insulating phase of the $mathrmSi(111)--7ifmmodetimeselse?fi7$ surface | 1-gen-2020 | Modesti S;Sheverdyaeva; P M;Moras P;Carbone C;Caputo M;Marsi M;Tosatti E;Profeta; G | |
Microscopic and spectroscopic characterization of paintbrush-like single-walled carbon nanotubes | 1-gen-2006 | Bonifazi, D; Nacci, C; Marega, R; Campidelli, S; Ceballos, G; Modesti, S; Meneghetti, M; Prato, M | |
Microscopic Mechanisms of Self-Compensation in Si delta-doped GaAs | 1-gen-2004 | S. Modesti; R. Duca; P. Finetti; G. Ceballos;M. Piccin; S. Rubini; A. Franciosi |