SOLMI, SANDRO
SOLMI, SANDRO
Istituto per la Microelettronica e Microsistemi - IMM
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires
2015 Suriano F;Ferri M;Moscatelli F;Mancarella F;Belsito L;Solmi S;Roncaglia A;Frabboni S;Gazzadi; G C;Narducci; D
Phonon scattering enhancement in silicon nanolayers
2012 Narducci, Dario; Cerofolini, Gianfranco; Ferri, Matteo; Suriano, Francesco; Mancarella, Fulvio; Belsito, Luca; Solmi, Sandro; Roncaglia, Alberto
Characterization of the PSG/Si interface of H3PO4 doping process for solar cells
2011 Armigliato, A; Nobili, D; Solmi, S; Blendin, G; Schum, B; Lachowicz, A; Horzel, J
Crossbar architecture for tera scale integration
2011 Cerofolini GF; Ferri M; Romano E; Suriano F; Veronese GP; Solmi S; Narducci D
Ultradense silicon nanowire arrays produced via top-down planar technology
2011 Ferri M; Suriano F; Roncaglia A; Solmi S; Cerofolini GF; Romano E; Narducci D .
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
2010 Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel
2010 Poggi A Moscatelli F; Solmi S; Armigliato A; Belsito L; Nipoti R;
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires
2010 Cerofolini, G F; Ferri, M; Romano, E; Suriano, F Veronese GP; Solmi, S; Narducci, D
Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires
2010 Cerofolini GF; Ferri M; Romano E; Suriano F; Veronese GP; Solmi S; Narducci D
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
2009 Pintile, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, B G
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET
2009 Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Cristiani, S; Sanmartin, M
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
2009 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R; Tamarri, F; Pizzochero, G
Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation
2009 Moscatelli, Francesco; Moscatelli, Francesco; Nipoti, Roberta; Nipoti, Roberta; Solmi, Sandro; Solmi, Sandro; Cristiani, Stefano; Cristiani, Stefano; Sanmartin, Michele; Sanmartin, Michele; Poggi, Antonella; Poggi, Antonella
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s
2008 Poggi A; Moscatelli F; Solmi S; Nipoti R
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET
2008 Moscatelli F; Poggi A; Solmi S; Nipoti R
Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy
2008 Parisini, A; Morandi, V; Solmi, S; Merli, Pg; Giubertoni, D; Bersani, M; van den Berg, Ja
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
2007 Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
2007 Poggi, A; Moscatelli, F; Hijikata, Y; Solmi, S; Sanmartin, M; Tamarri, F; Nipoti, R
Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation
2007 Hijikata Y; Yoshida S; Moscatelli F; Poggi A; Solmi S; Cristiani S; Nipoti R