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AVANZINI, VINCENZINO

AVANZINI, VINCENZINO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 23 (tempo di esecuzione: 0.044 secondi).
Titolo Data di pubblicazione Autore(i) File
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures 1-gen-2007 Seravalli L.; Frigeri P.; Avanzini V.; Franchi S.
1.50 um RT emission from strain-engineered InAs/InGaAs QDs (on GaAs) with additional InAlAs barriers 1-gen-2007 Seravalli L.; Frigeri P.; Allegri P.; Avanzini V.; Franchi S.
InAs/InGaAs nanostructures emitting at 1.50 um obtained by a combined approach of quantum dot strain engineering and barrier enhancing 1-gen-2007 Seravalli L.; Frigeri P.; Avanzini V.; Franchi S.
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency 1-gen-2007 Seravalli, L; Frigeri, P; Allegri, P; Avanzini, V; Franchi, S
Optical and morphological properties of InAs and In0.5Ga0.5As self-assembled quantum dots embedded in AlGaAs confining layers 1-gen-2007 Trevisi, G; Frigeri, P; Minelli, M; Avanzini, V; Allegri, P; Franchi, S
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission 1-gen-2007 Trevisi G.; Frigeri P.; Minelli M.; Allegri P.; Avanzini V.; Franchi S.
MBE preparation and optical characterization of InGaAs/AlGaAs quantum dot nanostructures for 980 nm operation 1-gen-2006 Trevisi G.; Frigeri P.; Minelli M.; Allegri P.; Avanzini V.; Franchi S.
Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency 1-gen-2006 Seravalli L.; Frigeri P.; Allegri P.; Avanzini V.; Franchi S.
Metamorphic self-assembled quantum dot nanostructures 1-gen-2006 Seravalli, L; Frigeri, P; Minelli, M; Franchi, S; Allegri, P; Avanzini, V
Optical properties of engineered metamorphic QD structures for long wavelength operation 1-gen-2006 Seravalli L.; Frigeri P.; Allegri P.; Avanzini V.; Franchi S.
Strain engineering of metamorphic quantum dot nanostructures for long wavelength emission 1-gen-2006 Seravalli, L; Frigeri, P; Allegri, P; Avanzini, V; Franchi, S
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm 1-gen-2005 Seravalli, L; Frigeri, P; Minelli, M; Allegri, P; Avanzini, V; Franchi, S
Engineering of quantum dot nanostructures for 1.3 µm light emission 1-gen-2003 Seravalli, L; Minelli, M; Frigeri, P; Allegri, P; Avanzini, V; Franchi, S
Engineering of quantum dot nanostructures for 980 nm emission 1-gen-2003 Trevisi, G; Frigeri, P; Belli, M; Allegri, P; Avanzini, V; Franchi, S
Quantum dot nanostructures for 980 nm laser devices 1-gen-2003 Trevisi G.; Frigeri P.; Belli M.; Allegri P.; Avanzini V.; Franchi S.
Quantum dot strain-engineering of nanostructures for 1.3 µm light emission 1-gen-2003 Seravalli, L; Minelli, M; Frigeri, P; Allegri, P; Avanzini, V; Franchi, S
Strain-balanced quantum well structures based on III-V materials for high efficiency solar cells 1-gen-2003 Minelli M.; Frigeri P.; Bocchi C.; Allegri P.; Avanzini V.; Franchi S.
Strain-balanced quantum well structures for high efficiency solar cells 1-gen-2003 Minelli M.; Frigeri P.; Bocchi C.; Allegri P.; Avanzini V.; Franchi S.
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures 1-gen-2003 Seravalli L.; Minelli M.; Frigeri P.; Allegri P.; Avanzini V.; Franchi S.
Vertically stacked quantum dots grown by ALMBE and MBE 1-gen-1999 Frigeri, P; Bosacchi, A; Franchi, S; Allegri, P; Avanzini, V