AVANZINI, VINCENZINO
AVANZINI, VINCENZINO
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures
2007 Seravalli L.; Frigeri P.; Avanzini V.; Franchi S.
1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures
2007 Seravalli, L.; Frigeri, P.; Avanzini, V.; Franchi, S.
Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency
2007 Seravalli, L; Frigeri, P; Allegri, P; Avanzini, V; Franchi, S
Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission
2007 Trevisi G.; Frigeri P.; Minelli M.; Allegri P.; Avanzini V.; Franchi S.
Metamorphic self-assembled quantum dot nanostructures
2006 Seravalli, L; Frigeri, P; Minelli, M; Franchi, S; Allegri, P; Avanzini, V
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm
2005 Seravalli, L; Frigeri, P; Minelli, M; Allegri, P; Avanzini, V; Franchi, S
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures
2003 Seravalli L.; Minelli M.; Frigeri P.; Allegri P.; Avanzini V.; Franchi S.
Vertically stacked quantum dots grown by ALMBE and MBE
1999 Frigeri, P; Bosacchi, A; Franchi, S; Allegri, P; Avanzini, V
InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE
1997 Bosacchi, A; Frigeri, P; Franchi, S; Allegri, P; Avanzini, V
II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates
1983 A. Bosacchi; S. Franchi; P. Allegri; V. Avanzini; C. Frigeri
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 1.46 um room-temperature emission from InAs/InGaAs quantum dot nanostructures | 1-gen-2007 | Seravalli L.; Frigeri P.; Avanzini V.; Franchi S. | |
| 1.46 μm room-temperature emission from InAs/InGaAs quantum dot nanostructures | 1-gen-2007 | Seravalli, L.; Frigeri, P.; Avanzini, V.; Franchi, S. | |
| Metamorphic Quantum Dot Nanostructures For Long Wavelength Operation With Enhanced Emission Efficiency | 1-gen-2007 | Seravalli, L; Frigeri, P; Allegri, P; Avanzini, V; Franchi, S | |
| Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission | 1-gen-2007 | Trevisi G.; Frigeri P.; Minelli M.; Allegri P.; Avanzini V.; Franchi S. | |
| Metamorphic self-assembled quantum dot nanostructures | 1-gen-2006 | Seravalli, L; Frigeri, P; Minelli, M; Franchi, S; Allegri, P; Avanzini, V | |
| Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm | 1-gen-2005 | Seravalli, L; Frigeri, P; Minelli, M; Allegri, P; Avanzini, V; Franchi, S | |
| The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures | 1-gen-2003 | Seravalli L.; Minelli M.; Frigeri P.; Allegri P.; Avanzini V.; Franchi S. | |
| Vertically stacked quantum dots grown by ALMBE and MBE | 1-gen-1999 | Frigeri, P; Bosacchi, A; Franchi, S; Allegri, P; Avanzini, V | |
| InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE | 1-gen-1997 | Bosacchi, A; Frigeri, P; Franchi, S; Allegri, P; Avanzini, V | |
| II-VI semiconductor epilayers grown by MBE on III-V semiconductor substrates | 1-gen-1983 | A. Bosacchi; S. Franchi; P. Allegri; V. Avanzini; C. Frigeri |