We report on a systematic study of InAs/GaAs self-aggregated quantum dot (QD) structures grown by ALMBE and MBE, consisting of 1-11 QD layers and of spacer layers with thicknesses of 20 - 53 ML. The AFM study of the topmost, untapped layer of QDs shows that ALMBE structures are more ordered and have QDs with larger dimensions and with sharper size distributions than the MBE counterparts. The energies and full-widths at half-maxima (fwhm) of 10 K photoluminescence (PL) transitions have been studied as functions of the number of stacked layers and of spacer thicknesses. We show that ALMBE allows the growth of stacked-QD structures that have bright PL at RT, emission wavelengths at RT very close to the 1.3 ?m spectral window and 10 K fwhms as low as 22 meV.
Vertically stacked quantum dots grown by ALMBE and MBE
Frigeri P;Franchi S;Avanzini V
1999
Abstract
We report on a systematic study of InAs/GaAs self-aggregated quantum dot (QD) structures grown by ALMBE and MBE, consisting of 1-11 QD layers and of spacer layers with thicknesses of 20 - 53 ML. The AFM study of the topmost, untapped layer of QDs shows that ALMBE structures are more ordered and have QDs with larger dimensions and with sharper size distributions than the MBE counterparts. The energies and full-widths at half-maxima (fwhm) of 10 K photoluminescence (PL) transitions have been studied as functions of the number of stacked layers and of spacer thicknesses. We show that ALMBE allows the growth of stacked-QD structures that have bright PL at RT, emission wavelengths at RT very close to the 1.3 ?m spectral window and 10 K fwhms as low as 22 meV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
