PARISINI, ANDREA
PARISINI, ANDREA
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Bologna
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films
2018 Parisini A.; Frabboni S.; Gazzadi G.C.; Rosa R.; Armigliato A.
SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers
2017 Vieira, E M F; Toudert, J; Rolo, A G; Parisini, A; Leitao, J P; Correia, M R; Franco, N; Alves, E; Chahboun, A; Martinsanchez, J; Serna, R; Gomes, M J M
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC
2017 Parisini, Antonella; Parisini, Andrea; Nipoti, Roberta
Thickness and orientation dependence of the average HAADF STEM normalized intensity: a comparison with Monte Carlo and Multislice simulations.
2017 Andrea Parisini; Stefano Frabboni; Gian Carlo Gazzadi; Aldo Armigliato; Rodolfo Rosa.
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing
2016 Nipoti, Roberta; Parisini, Antonella; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
Dual emission in asymmetric "giant" PbS/CdS/CdS core/shell/shell quantum dots
2016 Zhao, H; Sirigu, G; Parisini, A; Camellini, A; Nicotra, G; Rosei, F; Morandi, V; Zavelanirossi, M; Vomiero, A
Engineering interfacial structure in "Giant" PbS/CdS quantum dots for photoelectrochemical solar energy conversion
2016 Jin, L; Sirigu, G; Tong, X; Camellini, A; Parisini, A; Nicotra, G; Spinella, C; Zhao, H; Sun, S; Morandi, V; Zavelanirossi, M; Rosei, F; Vomiero, A
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing
2016 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
IBA study of SiGe/SiO2 nanostructured multilayers
2014 Barradas, Nuno P.; Alves, E.; Vieira, E. M. F.; Parisini, A.; Conde, O.; MartinSanchez, J.; Rolo, A. G.; Chahboun, A.; Gomes, M. J. M.
Charge trapping properties and charge retention-time in amorphous SiGe/SiO2 nanolayers
2013 F Vieira, E M; Diaz, R; Grisolia, J; Parisini, A; Martínsánchez, J; Levichev, S; G Rolo, A; Chahboun, A; M Gomes, M J
On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt-Si and its effect on the electrical properties
2013 J.P.B. Silva; K.C. Sekhar; S.A.S. Rodrigues; M. Pereira; A. Parisini; E. Alves; N.P. Barradas; M.J.M. Gomes
On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt-Si and its effect on the electrical properties
2013 Silva, J P B; Sekhar, K C; Rodrigues, S A S; Pereira, M; Parisini, A; Alves, E; Barradas, N P; Gomes, M J M
Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice
2012 F Vieira, E M; Martínsánchez, J; G Rolo, A; Parisini, A; Buljan, M; Capan, I; Alves, E; P Barradas, N; Conde, O; Bernstorff, S; Chahboun, A; Levichev, S; M Gomes, M J
A Luminescent Host-Guest Hybrid between an EuIII Complex and MWCNTs
2011 L. Maggini; J. Mohanraj; H. Traboulsi; A. Parisini; G. Accorsi; N. Armaroli;D. Bonifazi
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si
2011 Mohacsi I; Petrik P; Fried M; Lohner T; van den Berg JA; Reading MA; Giubertoni D; Barozzi M; Parisini A
Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation
2011 Hourdakis E; Nassiopoulou A G; Parisini A; Reading M A; van den Berg J A; Sygellou L; Ladas S; Petrik P; Nutsch A; Wolf M; Roeder G
High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers
2010 Reading MA; van den Berg JA; Zalm PC; Armour DG; Bailey P; Noakes TCQ; Parisini A; Conard T; De Gendt S
Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions
2009 Marega, R; Accorsi, G; Meneghetti, M; Parisini, A; Prato, M; Bonifazi, D
Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions
2009 Marega, Riccardo; Accorsi, Gianluca; Meneghetti, Moreno; Parisini, Andrea; Prato, Maurizio; Bonifazi, Davide; Bonifazi, Davide
Comparison of Electrical Measurements with Structural Analysis of Thin High-k Hf-Based Dielectric Films on Si
2009 Hourdakis E.; Theodoropoulou M.; Nassiopoulou A. G.; Parisini A.; Reading M. A.; van den Berg J. A.; Conard T. ;Degendt S.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films | 1-gen-2018 | Parisini A.; Frabboni S.; Gazzadi G.C.; Rosa R.; Armigliato A. | |
SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers | 1-gen-2017 | Vieira, E M F; Toudert, J; Rolo, A G; Parisini, A; Leitao, J P; Correia, M R; Franco, N; Alves, E; Chahboun, A; Martinsanchez, J; Serna, R; Gomes, M J M | |
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC | 1-gen-2017 | Parisini, Antonella; Parisini, Andrea; Nipoti, Roberta | |
Thickness and orientation dependence of the average HAADF STEM normalized intensity: a comparison with Monte Carlo and Multislice simulations. | 1-gen-2017 | Andrea Parisini; Stefano Frabboni; Gian Carlo Gazzadi; Aldo Armigliato; Rodolfo Rosa. | |
4H-SiC ion implanted bipolar junctions: Relevance of the 1950°C temperature for post implantation annealing | 1-gen-2016 | Nipoti, Roberta; Parisini, Antonella; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto | |
Dual emission in asymmetric "giant" PbS/CdS/CdS core/shell/shell quantum dots | 1-gen-2016 | Zhao, H; Sirigu, G; Parisini, A; Camellini, A; Nicotra, G; Rosei, F; Morandi, V; Zavelanirossi, M; Vomiero, A | |
Engineering interfacial structure in "Giant" PbS/CdS quantum dots for photoelectrochemical solar energy conversion | 1-gen-2016 | Jin, L; Sirigu, G; Tong, X; Camellini, A; Parisini, A; Nicotra, G; Spinella, C; Zhao, H; Sun, S; Morandi, V; Zavelanirossi, M; Rosei, F; Vomiero, A | |
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing | 1-gen-2016 | Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto | |
IBA study of SiGe/SiO2 nanostructured multilayers | 1-gen-2014 | Barradas, Nuno P.; Alves, E.; Vieira, E. M. F.; Parisini, A.; Conde, O.; MartinSanchez, J.; Rolo, A. G.; Chahboun, A.; Gomes, M. J. M. | |
Charge trapping properties and charge retention-time in amorphous SiGe/SiO2 nanolayers | 1-gen-2013 | F Vieira, E M; Diaz, R; Grisolia, J; Parisini, A; Martínsánchez, J; Levichev, S; G Rolo, A; Chahboun, A; M Gomes, M J | |
On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt-Si and its effect on the electrical properties | 1-gen-2013 | J.P.B. Silva; K.C. Sekhar; S.A.S. Rodrigues; M. Pereira; A. Parisini; E. Alves; N.P. Barradas; M.J.M. Gomes | |
On the formation of an interface amorphous layer in nanostructured ferroelectric Ba0.8Sr0.2TiO3 thin films integrated on Pt-Si and its effect on the electrical properties | 1-gen-2013 | Silva, J P B; Sekhar, K C; Rodrigues, S A S; Pereira, M; Parisini, A; Alves, E; Barradas, N P; Gomes, M J M | |
Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice | 1-gen-2012 | F Vieira, E M; Martínsánchez, J; G Rolo, A; Parisini, A; Buljan, M; Capan, I; Alves, E; P Barradas, N; Conde, O; Bernstorff, S; Chahboun, A; Levichev, S; M Gomes, M J | |
A Luminescent Host-Guest Hybrid between an EuIII Complex and MWCNTs | 1-gen-2011 | L. Maggini; J. Mohanraj; H. Traboulsi; A. Parisini; G. Accorsi; N. Armaroli;D. Bonifazi | |
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si | 1-gen-2011 | Mohacsi I; Petrik P; Fried M; Lohner T; van den Berg JA; Reading MA; Giubertoni D; Barozzi M; Parisini A | |
Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation | 1-gen-2011 | Hourdakis E; Nassiopoulou A G; Parisini A; Reading M A; van den Berg J A; Sygellou L; Ladas S; Petrik P; Nutsch A; Wolf M; Roeder G | |
High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers | 1-gen-2010 | Reading MA; van den Berg JA; Zalm PC; Armour DG; Bailey P; Noakes TCQ; Parisini A; Conard T; De Gendt S | |
Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions | 1-gen-2009 | Marega, R; Accorsi, G; Meneghetti, M; Parisini, A; Prato, M; Bonifazi, D | |
Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions | 1-gen-2009 | Marega, Riccardo; Accorsi, Gianluca; Meneghetti, Moreno; Parisini, Andrea; Prato, Maurizio; Bonifazi, Davide; Bonifazi, Davide | |
Comparison of Electrical Measurements with Structural Analysis of Thin High-k Hf-Based Dielectric Films on Si | 1-gen-2009 | Hourdakis E.; Theodoropoulou M.; Nassiopoulou A. G.; Parisini A.; Reading M. A.; van den Berg J. A.; Conard T. ;Degendt S. |