WIEMER, CLAUDIA
WIEMER, CLAUDIA
Istituto per la Microelettronica e Microsistemi - IMM
[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films
2007 Scarel, G; Wiemer, C; Fanciulli, M; Fedushkin, Il; Fukin, Gk; Domrachev, Ga; Lebedinskii, Y; Zenkevich, A; Pavia, G
A Novel Sb2Te3 Polymorph Stable at the Nanoscale
2015 Rotunno, Enzo; Longo, Massimo; Wiemer, Claudia; Fallica, Roberto; Campi, Davide; Bernasconi, Marco; Lupini Andrew, R; Pennycook Stephen, J; Lazzarini, Laura
A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf)
2013 Molle, Alessandro; Cianci, Elena; Lamperti, Alessio; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2 on Al surfaces for micromirror applications
2018 Cianci, E.; Lamperti, A.; Tallarida, G.; Zanuccoli, M.; Fiegna, C.; Lamagna, L.; Losa, S.; Rossini, S.; Vercesi, F.; Gatti, D.; Wiemer, C.
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3
2020 Longo, Emanuele; Mantovan, Roberto; Cecchini, Raimondo; D Overbeek, Michael; Longo, Massimo; Trevisi, Giovanna; Lazzarini, Laura; Tallarida, Graziella; Fanciulli, Marco; H Winter, Charles; Wiemer, Claudia
Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation
2008 Siegel, J; Gawelda, W; Puerto, D; Dorronsoro, C; Solis, J; Afonso, Cn; de Sande, Jcg; Bez, R; Pirovano, A; Wiemer, C
An accurate low-frequency model for the 3 omega method
2007 Battaglia, Jl; Wiemer, C; Fanciulli, M
Application of the X-ray combined analysis to the study of lead titanate based ferroelectric thin films
2004 Ricote, J; Chateigner, D; Morales, M; L Calzada, M; Wiemer, C
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As
2012 L. Lamagna; A. Molle; C. Wiemer; S. Spiga; C. Grazianetti; G. Congedo; M. Fanciulli
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si
2016 Vangelista, S.; Lamperti, A.; Wiemer, C.; Fanciulli, M.; Mantovan, R.
Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu
2006 Scarel, G; Wiemer, C; Tallarida, G; Spiga, S; Seguini, G; Bonera, E; Fanciulli, M; Lebedinskii, Y; Zenkevich, A; Pavia, G; Fedushkin, IL; Fukin, GK; Domrachev, GA
Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors
2008 Lu, Hl; Scarel, G; Wiemer, C; Perego, M; Spiga, S; Fanciulli, M; Pavia, G
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications
2012 Wiemer C; Lamagna L; Fanciulli M
Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory
2013 G. Congedo; C. Wiemer; A. Lamperti; E. Cianci; A. Molle; F. Volpe; S. Spiga
Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices
2008 A. Molle; S. Spiga; M. N. K. Bhuiyan; G. Tallarida; M. Perego; C. Wiemer; M. Fanciulli
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films
2017 Mantovan, R; Fallica, R; Mokhles Gerami, A; E Mølholt, T; Wiemer, C; Longo, M; P Gunnlaugsson, H; Johnston, K; Masenda, H; Naidoo, D; Ncube, M; Bharuthram, K; Fanciulli, M; P Gislason, H; Langouche, G; Ólafsson, S; Weyer, G
Au-catalyzed self assembly of GeTe nanowires by MOCVD
2011 Longo, M; Wiemer, C; Salicio, O; Fanciulli, M; Lazzarini, L; Rotunno, E
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD
2013 Longo, M; Stoycheva, T; Fallica, R; Wiemer, C; Lazzarini, L; Rotunno, E
CEMS characterisation of Fe/high-kappa oxide interfaces
2006 Mantovan, R; Wiemer, C; Zenkevich, A; Fanciulli, M
Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition
2009 Gaumer, C; Martinez, E; Lhostis, S; Wiemer, C; Perego, M; Loup, V; Lafond, D; Fabbri, Jm
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| [(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films | 1-gen-2007 | Scarel, G; Wiemer, C; Fanciulli, M; Fedushkin, Il; Fukin, Gk; Domrachev, Ga; Lebedinskii, Y; Zenkevich, A; Pavia, G | |
| A Novel Sb2Te3 Polymorph Stable at the Nanoscale | 1-gen-2015 | Rotunno, Enzo; Longo, Massimo; Wiemer, Claudia; Fallica, Roberto; Campi, Davide; Bernasconi, Marco; Lupini Andrew, R; Pennycook Stephen, J; Lazzarini, Laura | |
| A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) | 1-gen-2013 | Molle, Alessandro; Cianci, Elena; Lamperti, Alessio; Wiemer, Claudia; Spiga, Sabina; Fanciulli, Marco | |
| Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2 on Al surfaces for micromirror applications | 1-gen-2018 | Cianci, E.; Lamperti, A.; Tallarida, G.; Zanuccoli, M.; Fiegna, C.; Lamagna, L.; Losa, S.; Rossini, S.; Vercesi, F.; Gatti, D.; Wiemer, C. | |
| ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 | 1-gen-2020 | Longo, Emanuele; Mantovan, Roberto; Cecchini, Raimondo; D Overbeek, Michael; Longo, Massimo; Trevisi, Giovanna; Lazzarini, Laura; Tallarida, Graziella; Fanciulli, Marco; H Winter, Charles; Wiemer, Claudia | |
| Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation | 1-gen-2008 | Siegel, J; Gawelda, W; Puerto, D; Dorronsoro, C; Solis, J; Afonso, Cn; de Sande, Jcg; Bez, R; Pirovano, A; Wiemer, C | |
| An accurate low-frequency model for the 3 omega method | 1-gen-2007 | Battaglia, Jl; Wiemer, C; Fanciulli, M | |
| Application of the X-ray combined analysis to the study of lead titanate based ferroelectric thin films | 1-gen-2004 | Ricote, J; Chateigner, D; Morales, M; L Calzada, M; Wiemer, C | |
| Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As | 1-gen-2012 | L. Lamagna; A. Molle; C. Wiemer; S. Spiga; C. Grazianetti; G. Congedo; M. Fanciulli | |
| Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si | 1-gen-2016 | Vangelista, S.; Lamperti, A.; Wiemer, C.; Fanciulli, M.; Mantovan, R. | |
| Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu | 1-gen-2006 | Scarel, G; Wiemer, C; Tallarida, G; Spiga, S; Seguini, G; Bonera, E; Fanciulli, M; Lebedinskii, Y; Zenkevich, A; Pavia, G; Fedushkin, IL; Fukin, GK; Domrachev, GA | |
| Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors | 1-gen-2008 | Lu, Hl; Scarel, G; Wiemer, C; Perego, M; Spiga, S; Fanciulli, M; Pavia, G | |
| Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications | 1-gen-2012 | Wiemer C; Lamagna L; Fanciulli M | |
| Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory | 1-gen-2013 | G. Congedo; C. Wiemer; A. Lamperti; E. Cianci; A. Molle; F. Volpe; S. Spiga | |
| Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices | 1-gen-2008 | A. Molle; S. Spiga; M. N. K. Bhuiyan; G. Tallarida; M. Perego; C. Wiemer; M. Fanciulli | |
| Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films | 1-gen-2017 | Mantovan, R; Fallica, R; Mokhles Gerami, A; E Mølholt, T; Wiemer, C; Longo, M; P Gunnlaugsson, H; Johnston, K; Masenda, H; Naidoo, D; Ncube, M; Bharuthram, K; Fanciulli, M; P Gislason, H; Langouche, G; Ólafsson, S; Weyer, G | |
| Au-catalyzed self assembly of GeTe nanowires by MOCVD | 1-gen-2011 | Longo, M; Wiemer, C; Salicio, O; Fanciulli, M; Lazzarini, L; Rotunno, E | |
| Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD | 1-gen-2013 | Longo, M; Stoycheva, T; Fallica, R; Wiemer, C; Lazzarini, L; Rotunno, E | |
| CEMS characterisation of Fe/high-kappa oxide interfaces | 1-gen-2006 | Mantovan, R; Wiemer, C; Zenkevich, A; Fanciulli, M | |
| Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition | 1-gen-2009 | Gaumer, C; Martinez, E; Lhostis, S; Wiemer, C; Perego, M; Loup, V; Lafond, D; Fabbri, Jm |