Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein,we report the self-assembled Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge-Sb-Te nanowires were self-assembled through thevapor-liquid-solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge-Sb-Te core and Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolutiontransmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties,and elemental composition.

Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Arun Kumar;Raimondo Cecchini;Claudia Wiemer;Valentina Mussi;Sara De Simone;Raffaella Calarco;Mario Scuderi;Giuseppe Nicotra;Massimo Longo
2021

Abstract

Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein,we report the self-assembled Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge-Sb-Te nanowires were self-assembled through thevapor-liquid-solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge-Sb-Te core and Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolutiontransmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties,and elemental composition.
2021
Istituto per la Microelettronica e Microsistemi - IMM
MOCVD; VLS; phase-change memory; nanowires; core-shell; Ge-Sb-Te; Ge-Sb-Te/Sb2Te3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/445048
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