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MIRABELLA, SALVATORE

MIRABELLA, SALVATORE  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 182 (tempo di esecuzione: 0.03 secondi).
Titolo Data di pubblicazione Autore(i) File
A novel gas-phase mono and bimetallic clusters decorated Zno nanorods electrochemical sensor for 4-aminophenol detection 1-gen-2018 Fiaschi G.; Cosentino S.; Pandey R.; Mirabella S.; Strano V.; Maiolo L.; Grandjean D.; Lievens P.; ShachamDiamand Y.
Activation and carrier mobility in high fluence B implanted germanium 1-gen-2008 Mirabella, S; Impellizzeri, G; Piro, Am; Bruno, E; Grimaldi, Mg
Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation 1-gen-2007 D'Angelo, D; Piro, AM; Mirabella, S; Bongiorno, C; Romano, L; Terrasi, A; Grimaldi, MG
Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition 1-gen-2010 Crupi I; Mirabella S; D'Angelo D; Gibilisco S; Grasso A; Di Marco S; Simone F; Terrasi A
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions 1-gen-2010 Aboy, M; Pelaz, L; Lopez, P; Bruno, E; Mirabella, S
Atomistic mechanism of boron diffusion in silicon 1-gen-2006 Napolitani, Enrico ; Impellizzeri, Giuliana ; Mirabella, Salvatore ; PRIOLO, FRANCESCO ; DE SALVADOR, DAVIDE ; BISOGNIN, GABRIELE ; CARNERA, ALBERTO
Atomistic modeling of FnVm complexes in pre-amorphized Si 1-gen-2008 Lopez, P; Pelaz, L; Aboy, M; Impellizzeri, G; Mirabella, S; Priolo, F; Napolitani, E
B activation and clustering in ion-implanted Ge 1-gen-2009 Impellizzeri, G; Mirabella, S; Bruno, E; Piro, A M; Grimaldi, M G
B activation enhancement in submicron confined implants in Si 1-gen-2005 Bruno, E; Mirabella, S; Impellizzeri, G; Priolo, F; Giannazzo, F; Raineri, V; Napolitani, E
B clustering in amorphous Si 1-gen-2008 De Salvador, D; Bisognin, G; Di Marino, M; Napolitani, E; Carnera, A; Mirabella, S; Pecora, E; Bruno, E; Priolo, F; Graoui, H; Foad, MA; Boscherini, F
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 1-gen-2006 Di Marino, M; Napolitani, E; Mastromatteo, M; Bisognin, G; De Salvador, D; Carnera, A; Mirabella, S; Impellizzeri, G; Priolo, F; Graoui, H; Foad, MA
B electrical activation in crystalline and preamorphized Ge 1-gen-2008 Bruno, E; Impellizzeri, G; Mirabella, S; Piro, Am; Irrera, A; Grimaldi, Mg
B implanted at room temperature in crystalline Si: B defect formation and dissolution 1-gen-2005 L Romano; AM Piro; S Mirabella; MG Grimaldi
Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine 1-gen-2007 Impellizzeri, G; Mirabella, S; Grimaldi, Mg; Priolo, F; Giannazzo, F; Raineri, V; Napolitani, E; Carnera, A
Boron diffusion in extrinsically doped crystalline silicon 1-gen-2010 De Salvador D; Napolitani E; Bisognin G; Pesce M; Carnera A; Bruno E; Impellizzeri G; Mirabella S
Boron diffusion in nanocrystalline 3C-SiC 1-gen-2014 Schnabel, M; Weiss, C; Canino, M; Rachow, T; Löper, P; Summonte, C; Mirabella, S; Janz, S; Wilshaw, Pr
Boron lattice location in room temperature ion implanted Si crystal 1-gen-2005 Piro, Am; Romano, L; Mirabella, S; Grimaldi, Mg
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 1-gen-2004 Bisognin, G; De Salvador, D; Napolitani, E; Aldegheri, L; Berti, A; Camera, A; Drigo, A; Mirabella, S; Bruno, E; Impellizzeri, G; Priolo, F
Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors 1-gen-2014 Morawiec, SEWERYN ADAM; Mendes Manuel, J; Filonovich Sergej, A; Mateus, Tiago; Mirabella, Salvatore; Aguas, Hugo; Ferreira, Isabel; Simone, Francesca; Fortunato, Elvira; Martins, Rodrigo; Priolo, Francesco; Crupi, Isodiana
Carrier concentration and mobility in B doped Si1-xGex 1-gen-2003 Romano, L; Napolitani, E; Privitera, V; Scalese, S; Terrasi, A; Mirabella, S; Grimaldi, Mg