Titanium dioxide Nanowires (NWs) are particularly interesting because of their very high surface/volume ratio and their photocatalytic activity allows them to be used in a myriad of applications. This manuscript presents a study of nanowires grown on a conductive substrate making use of a seed-assisted thermal oxidation process. To obtain doped NWs, before the oxidation, metallic titanium was doped with Fe (or Cr) by ion implantation technology. Analyses showed good quality Rutile phase and light absorption in the visible range. Transport properties of the NWs/electrolyte junction were investigated by using linear sweep voltammetry and electrochemical impedance spectroscopy. They allowed us to measure the photovoltage and the barrier height of the junction. We also evaluated the density of hole trap states at the interface during illumination. Electrical results indicate that the formation of deep levels, induced by doping, influences the electron concentration in the TiO2 and the transport properties. Graphical abstract: (Figure presented.)
Photoelectrochemical properties of doped TiO2 nanowires grown by seed-assisted thermal oxidation
Zimbone M.;Battiato S.;Pezzotti Escobar G.;Pellegrino G.;Mirabella S.;Impellizzeri G.
2024
Abstract
Titanium dioxide Nanowires (NWs) are particularly interesting because of their very high surface/volume ratio and their photocatalytic activity allows them to be used in a myriad of applications. This manuscript presents a study of nanowires grown on a conductive substrate making use of a seed-assisted thermal oxidation process. To obtain doped NWs, before the oxidation, metallic titanium was doped with Fe (or Cr) by ion implantation technology. Analyses showed good quality Rutile phase and light absorption in the visible range. Transport properties of the NWs/electrolyte junction were investigated by using linear sweep voltammetry and electrochemical impedance spectroscopy. They allowed us to measure the photovoltage and the barrier height of the junction. We also evaluated the density of hole trap states at the interface during illumination. Electrical results indicate that the formation of deep levels, induced by doping, influences the electron concentration in the TiO2 and the transport properties. Graphical abstract: (Figure presented.)File | Dimensione | Formato | |
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Descrizione: Photoelectrochemical properties of doped
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