MARRI, IVAN
MARRI, IVAN
Istituto Nanoscienze - NANO
D1.5 Third release of MAX software: Final report on restructuring, exascale readiness and inter-code libraries
2022 Baroni, Stefano; Carnimeo, Ivan; Degomme, Augustin; Delugas, Pietro; DE GIRONCOLI, STEFANO MARIA; Marini, Andrea; Sangalli, Davide; Varsano, Daniele; FERRARI RUFFINO, Fabrizio; Ferretti, Andrea; Garcia, Alberto; Genovese, Luigi; Giannozzi, Paolo; Kozhevnikov, Anton; Marri, Ivan; Spallanzani, Nicola; Daniel Wortmann, And
Multiple exciton generation in isolated and interacting silicon nanocrystals
2021 Marri I.; Ossicini S.
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase
2020 Ossicini S.; Marri I.; Amato M.; Palummo M.; Canadell E.; Rurali R.
D1.4 Second release of MAX software: Report on first common APIs, data structures and domain-specific libraries
2020 Baroni, Stefano; Degomme, Augustin; Delugas, Pietro; DE GIRONCOLI, STEFANO MARIA; Marini, Andrea; Sangalli, Davide; Varsano, Daniele; FERRARI RUFFINO, Fabrizio; Ferretti, Andrea; Garcia, Alberto; Genovese, Luigi; Giannozzi, Paolo; Kozhevnikov, Anton; Marri, Ivan; Spallanzani, Nicola; Wortmann, Daniel
Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures
2020 Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano
Many-body perturbation theory calculations using the yambo code
2019 Sangalli, D.; Ferretti, A.; Miranda, H.; Attaccalite, C.; Marri, I.; Cannuccia, E.; Melo, P.; Marsili, M.; Paleari, F.; Marrazzo, A.; Prandini, G.; Bonfà, P.; Atambo, M. O.; Affinito, F.; Palummo, M.; Molina-Sánchez, A.; Hogan, C.; Grüning, M.; Varsano, D.; Marini, A.
First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications
2018 Marri, I; Amato, M; Guerra, R; Ossicini, S
First-principle investigations of carrier multiplication in Si nanocrystals: A short review
2018 Marri I.; Ossicini S.
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation
2017 Marri I.; Govoni M.; Ossicini S.
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces
2017 Marri I.; Degoli E.; Ossicini S.
First Principle Studies of B and P Doped Si Nanocrystals
2017 Marri I.; Degoli E.; Ossicini S.
Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study
2017 Bertocchi, M; Amato, M; Marri, I; Ossicini, S
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes
2016 Marri, I; Govoni, M; Ossicini, S
Silicon nanocrystals for photonics and photovoltaics: Ab initio results
2016 Ossicini, S; Govoni, M; Guerra, R; Marri, I
Carrier multiplication in isolated and interacting silicon nanocrystals
2015 Marri, I; Govoni, M; Ossicini, S
Carrier multiplication in silicon nanocrystals: ab initio results
2015 Marri, Ivan; Govoni, Marco; Ossicini, Stefano
Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals
2014 Marri, I; Govoni, M; Ossicini, S
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics
2012 Govoni M.; Marri I.; Ossicini S.
Auger recombination in Si and GaAs semiconductors: Ab initio results
2011 Govoni M.; Marri I.; Ossicini S.
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures
2009 Degoli, E; Guerra, R; Iori, F; Magri, R; Marri, I; Pulci, O; Bisi, O; Ossicini, S
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
D1.5 Third release of MAX software: Final report on restructuring, exascale readiness and inter-code libraries | 1-gen-2022 | Baroni, Stefano; Carnimeo, Ivan; Degomme, Augustin; Delugas, Pietro; DE GIRONCOLI, STEFANO MARIA; Marini, Andrea; Sangalli, Davide; Varsano, Daniele; FERRARI RUFFINO, Fabrizio; Ferretti, Andrea; Garcia, Alberto; Genovese, Luigi; Giannozzi, Paolo; Kozhevnikov, Anton; Marri, Ivan; Spallanzani, Nicola; Daniel Wortmann, And | |
Multiple exciton generation in isolated and interacting silicon nanocrystals | 1-gen-2021 | Marri I.; Ossicini S. | |
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase | 1-gen-2020 | Ossicini S.; Marri I.; Amato M.; Palummo M.; Canadell E.; Rurali R. | |
D1.4 Second release of MAX software: Report on first common APIs, data structures and domain-specific libraries | 1-gen-2020 | Baroni, Stefano; Degomme, Augustin; Delugas, Pietro; DE GIRONCOLI, STEFANO MARIA; Marini, Andrea; Sangalli, Davide; Varsano, Daniele; FERRARI RUFFINO, Fabrizio; Ferretti, Andrea; Garcia, Alberto; Genovese, Luigi; Giannozzi, Paolo; Kozhevnikov, Anton; Marri, Ivan; Spallanzani, Nicola; Wortmann, Daniel | |
Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures | 1-gen-2020 | Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano | |
Many-body perturbation theory calculations using the yambo code | 1-gen-2019 | Sangalli, D.; Ferretti, A.; Miranda, H.; Attaccalite, C.; Marri, I.; Cannuccia, E.; Melo, P.; Marsili, M.; Paleari, F.; Marrazzo, A.; Prandini, G.; Bonfà, P.; Atambo, M. O.; Affinito, F.; Palummo, M.; Molina-Sánchez, A.; Hogan, C.; Grüning, M.; Varsano, D.; Marini, A. | |
First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications | 1-gen-2018 | Marri, I; Amato, M; Guerra, R; Ossicini, S | |
First-principle investigations of carrier multiplication in Si nanocrystals: A short review | 1-gen-2018 | Marri I.; Ossicini S. | |
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation | 1-gen-2017 | Marri I.; Govoni M.; Ossicini S. | |
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces | 1-gen-2017 | Marri I.; Degoli E.; Ossicini S. | |
First Principle Studies of B and P Doped Si Nanocrystals | 1-gen-2017 | Marri I.; Degoli E.; Ossicini S. | |
Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study | 1-gen-2017 | Bertocchi, M; Amato, M; Marri, I; Ossicini, S | |
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes | 1-gen-2016 | Marri, I; Govoni, M; Ossicini, S | |
Silicon nanocrystals for photonics and photovoltaics: Ab initio results | 1-gen-2016 | Ossicini, S; Govoni, M; Guerra, R; Marri, I | |
Carrier multiplication in isolated and interacting silicon nanocrystals | 1-gen-2015 | Marri, I; Govoni, M; Ossicini, S | |
Carrier multiplication in silicon nanocrystals: ab initio results | 1-gen-2015 | Marri, Ivan; Govoni, Marco; Ossicini, Stefano | |
Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals | 1-gen-2014 | Marri, I; Govoni, M; Ossicini, S | |
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics | 1-gen-2012 | Govoni M.; Marri I.; Ossicini S. | |
Auger recombination in Si and GaAs semiconductors: Ab initio results | 1-gen-2011 | Govoni M.; Marri I.; Ossicini S. | |
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures | 1-gen-2009 | Degoli, E; Guerra, R; Iori, F; Magri, R; Marri, I; Pulci, O; Bisi, O; Ossicini, S |