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MARRI, IVAN

MARRI, IVAN  

Istituto Nanoscienze - NANO  

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Risultati 1 - 20 di 29 (tempo di esecuzione: 0.047 secondi).
Titolo Data di pubblicazione Autore(i) File
Multiple exciton generation in isolated and interacting silicon nanocrystals 1-gen-2021 Marri I.; Ossicini S.
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase 1-gen-2020 Ossicini S.; Marri I.; Amato M.; Palummo M.; Canadell E.; Rurali R.
Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures 1-gen-2020 Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano
Many-body perturbation theory calculations using the yambo code 1-gen-2019 Sangalli, D.; Ferretti, A.; Miranda, H.; Attaccalite, C.; Marri, I.; Cannuccia, E.; Melo, P.; Marsili, M.; Paleari, F.; Marrazzo, A.; Prandini, G.; Bonfà, P.; Atambo, M. O.; Affinito, F.; Palummo, M.; Molina-Sánchez, A.; Hogan, C.; Grüning, M.; Varsano, D.; Marini, A.
First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications 1-gen-2018 Marri, I; Amato, M; Guerra, R; Ossicini, S
First-principle investigations of carrier multiplication in Si nanocrystals: A short review 1-gen-2018 Marri I.; Ossicini S.
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation 1-gen-2017 Marri I.; Govoni M.; Ossicini S.
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces 1-gen-2017 Marri I.; Degoli E.; Ossicini S.
First Principle Studies of B and P Doped Si Nanocrystals 1-gen-2017 Marri I.; Degoli E.; Ossicini S.
Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study 1-gen-2017 Bertocchi, M; Amato, M; Marri, I; Ossicini, S
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes 1-gen-2016 Marri, I; Govoni, M; Ossicini, S
Carrier multiplication in silicon nanocrystals: ab initio results 1-gen-2015 Marri, Ivan; Govoni, Marco; Ossicini, Stefano
Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals 1-gen-2014 Marri, I; Govoni, M; Ossicini, S
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics 1-gen-2012 Govoni M.; Marri I.; Ossicini S.
Auger recombination in Si and GaAs semiconductors: Ab initio results 1-gen-2011 Govoni M.; Marri I.; Ossicini S.
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 1-gen-2009 Degoli, E; Guerra, R; Iori, F; Magri, R; Marri, I; Pulci, O; Bisi, O; Ossicini, S
Optical properties of silicon nanocrystallites in SiO2 matrix: Crystalline vs. amorphous case 1-gen-2009 Guerra, R; Marri, I; Magri, R; Martinsamos, L; Pulci, O; Degoli, E; Ossicini, S
Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size 1-gen-2009 Guerra, Roberto; Marri, Ivan; Magri, Rita; Martinsamos, Layla; Pulci, Olivia; Degoli, Elena; Ossicini, Stefano
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 1-gen-2008 Ossicini, S; Bisi, O; Degoli, E; Marri, I; Iori, F; Luppi, E; Magri, R; Poli, R; Cantele, G; Ninno, D; Trani, F; Marsili, M; Pulci, O; Olevano, O; Gatti, M; Gaalnagy, K; Incze, A; Onida, G
Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(110) interface: A first principle study 1-gen-2008 Marri, I; Ossicini, S