First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes

Studio degli effetti indotti dall'interazione tra nanocristalli sugli edge di banda e sui processi di moltiplicazione di carica.

Arrays of closely packed nanocrystals show interesting properties that can be exploited to induce new features in nanostructured optoelectronic devices. In this work we study, by first principles calculations, effects induced on near band-edge states and on carrier multiplication by nanocrystals interplay. By considering both hydrogenated and oxygenated structures, we prove that interaction between silicon nanocrystals can alter both the energy gap of the system and dynamics of excited states with a relevance that depends on the nanocrystal-nanocrystal separation, on nanocrystals orientation and on nanocrystals surface properties.