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OSSICINI, STEFANO

OSSICINI, STEFANO  

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Risultati 1 - 20 di 82 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autore(i) File
"Self-energy and excitonic effects in the electronic and optical properties of TiO2 crystalline phases" 1-gen-2010 Chiodo, L; Garcialastra, Jm; Iacomino, A; Ossicini, S; Zhao, J; Petek, H; Rubio, A
Ab initio electronic gaps of Ge nanodots: The role of self-energy effects 1-gen-2013 Marsili, Margherita , ; Botti, Silvana , ; Palummo, Maurizia , ; Degoli, Elena , ; Pulci, Olivia , ; Weissker, HansChristian ; Marques, Miguel A. L. ; Ossicini, Stefano , ; Del Sole, Rodolfo ,
Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state 1-gen-2004 Degoli, E; Cantele, G; Luppi, E; Magri, R; Ninno, D; Bisi, O; Ossicini, S
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase 1-gen-2020 Ossicini S.; Marri I.; Amato M.; Palummo M.; Canadell E.; Rurali R.
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 1-gen-2009 Degoli, E; Guerra, R; Iori, F; Magri, R; Marri, I; Pulci, O; Bisi, O; Ossicini, S
Ab-initio electronic and optical properties of low dimensional systems: From single particle to many-body approaches 1-gen-2007 Palummo, M; Bruno, M; Pulci, O; Luppi, E; Degoli, E; Ossicini, S; Del Sole, R
Ab-initio optoelectronic properties of SiGe nanowires 1-gen-2010 Palummo M.; M. Amato;S. Ossicini
Auger recombination in Si and GaAs semiconductors: Ab initio results 1-gen-2011 Govoni M.; Marri I.; Ossicini S.
Band Structure Analysis in SiGe nanowires 1-gen-2012 M. Amato; M. Palummo; S. Ossicini
Band-Offset Driven Efficiency of the Doping of SiGe Core-Shell Nanowires 1-gen-2011 M, Amato; Ossicini, S; Rurali, R
Band-offset driven efficiency of the doping of sige core-shell nanowires 1-gen-2011 Amato, M; Ossicini, S; Rurali, R
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics 1-gen-2012 Govoni, M; Marri, I; Ossicini, S
Carrier multiplication in isolated and interacting silicon nanocrystals 1-gen-2015 Marri, I; Govoni, M; Ossicini, S
Carrier multiplication in silicon nanocrystals: ab initio results 1-gen-2015 Marri, Ivan; Govoni, Marco; Ossicini, Stefano
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation 1-gen-2017 Marri I.; Govoni M.; Ossicini S.
Conductance fluctuations in Si nanowires studied from first-principles 1-gen-2014 Iori, F; Ossicini, S; Rurali, R
Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices 1-gen-2014 Bertocchi, M; Luppi, E; Degoli, E; Veniard, V; Ossicini, S
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces 1-gen-2017 Marri I.; Degoli E.; Ossicini S.
Doping in silicon nanocrystals 1-gen-2007 Ossicini, S; Degoli, E; Iori, F; Pulci, O; Cantele, G; Magri, R; Bisi, O; Trani, F; Ninno, D
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 1-gen-2006 Iori, F; Degoli, E; Luppi, E; Magri, R; Marri, I; Cantele, G; Ninno, D; Trani, F; Ossicini, S