A systematic theoretical study of the work function behavior for Si1-xGex heterostructures over the whole composition range, from Si (x = 0) to Ge (x = 1), is presented. Our results, obtained through Density Functional Theory calculations and in good agreement with experimental evidences, show that increasing the Ge content lowers the work function value. We find that in order to exactly reproduce this behaviour in relation to the work function of pure Ge and Si systems and their concentrations, a deviation from the linear Vegard's rule is necessary. However, the calculated bowing parameter is very small, thus making the simple linear interpolation a valid approximation to obtain the work function of complex SiGe alloys. (C) 2016 AIP Publishing LLC.

Work function bowing in Si1- xGex heterostructures: Ab initio results

S Ossicini
2016

Abstract

A systematic theoretical study of the work function behavior for Si1-xGex heterostructures over the whole composition range, from Si (x = 0) to Ge (x = 1), is presented. Our results, obtained through Density Functional Theory calculations and in good agreement with experimental evidences, show that increasing the Ge content lowers the work function value. We find that in order to exactly reproduce this behaviour in relation to the work function of pure Ge and Si systems and their concentrations, a deviation from the linear Vegard's rule is necessary. However, the calculated bowing parameter is very small, thus making the simple linear interpolation a valid approximation to obtain the work function of complex SiGe alloys. (C) 2016 AIP Publishing LLC.
2016
Istituto Nanoscienze - NANO
SILICON-GERMANIUM HETEROSTRUCTURES; LATTICE-PARAMETER; GREENS-FUNCTION; BAND-STRUCTURE; ALLOYS; SIGE; GE; MOBILITY; PHYSICS; ELECTRONICS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/315807
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