OSSICINI, STEFANO
OSSICINI, STEFANO
Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals
2023 Marri, Ivan; Grillo, Simone; Amato, Michele; Ossicini, Stefano; Pulci, Olivia
Multiple exciton generation in isolated and interacting silicon nanocrystals
2021 Marri I.; Ossicini S.
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase
2020 Ossicini S.; Marri I.; Amato M.; Palummo M.; Canadell E.; Rurali R.
Doping of III-V Arsenide and Phosphide Wurtzite Semiconductors
2020 Giorgi G.; Amato M.; Ossicini S.; Cartoixa X.; Canadell E.; Rurali R.
Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures
2020 Marri, Ivan; Amato, Michele; Bertocchi, Matteo; Ferretti, Andrea; Varsano, Daniele; Ossicini, Stefano
Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires
2019 Amato, M; Ossicini, S; Canadell, E; Rurali, R
First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications
2018 Marri, I; Amato, M; Guerra, R; Ossicini, S
First-principle investigations of carrier multiplication in Si nanocrystals: A short review
2018 Marri I.; Ossicini S.
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation
2017 Marri I.; Govoni M.; Ossicini S.
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces
2017 Marri I.; Degoli E.; Ossicini S.
First Principle Studies of B and P Doped Si Nanocrystals
2017 Marri I.; Degoli E.; Ossicini S.
Second harmonic generation in silicon based heterostructures: The role of strain and symmetry
2017 Bertocchi, M; Degoli, E; Veniard, V; Luppi, E; Ossicini, S
Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study
2017 Bertocchi, M; Amato, M; Marri, I; Ossicini, S
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes
2016 Marri, I; Govoni, M; Ossicini, S
Silicon nanocrystals for photonics and photovoltaics: Ab initio results
2016 Ossicini, S; Govoni, M; Guerra, R; Marri, I
Work function bowing in Si1- xGex heterostructures: Ab initio results
2016 M. Amato; M. Bertocchi;S. Ossicini
Carrier multiplication in isolated and interacting silicon nanocrystals
2015 Marri, I; Govoni, M; Ossicini, S
Carrier multiplication in silicon nanocrystals: ab initio results
2015 Marri, Ivan; Govoni, Marco; Ossicini, Stefano
Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials
2015 Luppi E. , ; Degoli E. , ; Bertocchi M. ; Ossicini S. , ; Veniard V. ,
Conductance fluctuations in Si nanowires studied from first-principles
2014 Iori, F; Ossicini, S; Rurali, R