Tuning the desorption temperature of an As cap layer allows to achieve In0.53Ga0.47As(001) surfaces with (24) and (42) reconstructions which exhibit different chemical reactivity upon exposure in atmospheric pressure. Trimethyl-Al based atomic layer deposition of Al2O3 films on the two exposed surfaces causes a non-equivalent interface composition. This behavior is associated with a worse electrical quality of the interface with the exposed (42) In0.53Ga0.47As reconstruction.
Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
A Molle;C Grazianetti;S Spiga;M Fanciull
2011
Abstract
Tuning the desorption temperature of an As cap layer allows to achieve In0.53Ga0.47As(001) surfaces with (24) and (42) reconstructions which exhibit different chemical reactivity upon exposure in atmospheric pressure. Trimethyl-Al based atomic layer deposition of Al2O3 films on the two exposed surfaces causes a non-equivalent interface composition. This behavior is associated with a worse electrical quality of the interface with the exposed (42) In0.53Ga0.47As reconstruction.File in questo prodotto:
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