The dynamics of deuterium in GaAs doped with Zn has been investigated by anelastic relaxation. The most likely configuration is D trapped by substitutional Zn, although D trapped at a Ga vacancy cannot be excluded. The relaxation of D occurs at about 20 K in the kHz range and has the highest rate found up to now for a hydrogen isotope in a semiconductor. The shape of the curves of the elastic energy loss vs temperature indicates that the nature of the D reorientation is strongly quantistic.
Quantum diffusion of deuterium in GaAs:Zn
F Cordero;E Giovine;
1996
Abstract
The dynamics of deuterium in GaAs doped with Zn has been investigated by anelastic relaxation. The most likely configuration is D trapped by substitutional Zn, although D trapped at a Ga vacancy cannot be excluded. The relaxation of D occurs at about 20 K in the kHz range and has the highest rate found up to now for a hydrogen isotope in a semiconductor. The shape of the curves of the elastic energy loss vs temperature indicates that the nature of the D reorientation is strongly quantistic.File in questo prodotto:
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