The molecular structure of tris[bis(trimethylsilyl)amido]-lutetium, [(Me3Si)(2)N](3)Lu, is investigated. An agostic interaction is found between Lu and the Si atom of the silyl group. The performance of [(Me3Si)(2)N](3)Lu as precursor to deposit Lu silicate layers by atomic layer deposition using either H2O or O-3 as oxygen source is studied. Si incorporation in the films is revealed: [(Me3Si)(2)N](3)Lu thermal decomposition and the mentioned agostic interaction contribute both to the phenomenon. [(Me3Si)(2)N](3)Lu thermal de-composition also affects the growth rate of films deposited using H2O. The growth rate of films deposited Using O-3, especially at growth temperatures < 300 degrees C, is extremely high, probably because of the hydrogen atoms existing in [(Me3Si)(2)N](3)Lu.
[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films
Scarel G;Wiemer C;Fanciulli M;
2007
Abstract
The molecular structure of tris[bis(trimethylsilyl)amido]-lutetium, [(Me3Si)(2)N](3)Lu, is investigated. An agostic interaction is found between Lu and the Si atom of the silyl group. The performance of [(Me3Si)(2)N](3)Lu as precursor to deposit Lu silicate layers by atomic layer deposition using either H2O or O-3 as oxygen source is studied. Si incorporation in the films is revealed: [(Me3Si)(2)N](3)Lu thermal decomposition and the mentioned agostic interaction contribute both to the phenomenon. [(Me3Si)(2)N](3)Lu thermal de-composition also affects the growth rate of films deposited using H2O. The growth rate of films deposited Using O-3, especially at growth temperatures < 300 degrees C, is extremely high, probably because of the hydrogen atoms existing in [(Me3Si)(2)N](3)Lu.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
