The temperature behavior of dark current in SiPM pixels was studied for two fabrication technologies differing in the anode contact. The first (old) technology had the contact on the front while the second (new) has the anode contact on the back. The layout changes allowed us to obtain a strong reduction of the dark current diffusive component thus strongly improving the device performances
Improvement of the diffusive component of dark current in SiPM pixels
R Pagano;S Libertino;D Corso;S Lombardo;
2012
Abstract
The temperature behavior of dark current in SiPM pixels was studied for two fabrication technologies differing in the anode contact. The first (old) technology had the contact on the front while the second (new) has the anode contact on the back. The layout changes allowed us to obtain a strong reduction of the dark current diffusive component thus strongly improving the device performancesFile in questo prodotto:
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