Our main results on the study of both single pixels and SiPM arrays produced by STMicroelectronics in Catania are reviewed. Our data, coupled to an extensive simulation study, show that the single pixel technology is close to its ultimate physical limit. The distribution of dark current in large arrays follows a Poissonian law. Cross talk effects are strongly reduced by the presence of optical trenches surrounding each pixel of the array. Finally, we demonstrate that these devices can be used as single photon counters also without a complex amplification stage.

Silicon Photomultiplier: Technology improvement and performance

R Pagano;S Libertino;D Corso;S Lombardo;
2013

Abstract

Our main results on the study of both single pixels and SiPM arrays produced by STMicroelectronics in Catania are reviewed. Our data, coupled to an extensive simulation study, show that the single pixel technology is close to its ultimate physical limit. The distribution of dark current in large arrays follows a Poissonian law. Cross talk effects are strongly reduced by the presence of optical trenches surrounding each pixel of the array. Finally, we demonstrate that these devices can be used as single photon counters also without a complex amplification stage.
2013
Istituto per la Microelettronica e Microsistemi - IMM
Silicon Photomultipliers
dark count
trenches
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/119382
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