In this paper we propose the design of a Silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 mu m, and entirely compatible with ULSI Silicon technology.
Silicon resonant cavity enhanced photodetector at 1.55 ?m
Casalino M;Sirleto L;Libertino S;Rendina I
2005
Abstract
In this paper we propose the design of a Silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 mu m, and entirely compatible with ULSI Silicon technology.File in questo prodotto:
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