A CVD route to grow MoO3-Bi2O3 thin films on Al2O3 and SiO2/Si(100) is proposed. The composition of the obtained films can be suitably tailored by choosing the proper synthesis and thermal treatment conditions, obtaining thus a light or a heavy mixing of the two oxides.The chemical composition of the films is investigated by XPS and FT-IR, while their microstructure and surface morphology are analized respectively by XRD and AFM. Preliminary data on the gas sensing behaviour of pure MoO3 and Bi doped MoO3 films are presented and discussed.
Gas sensing performances of MoO3 and Bi doped MoO3 thin films grown by MOCVD
D Barreca;GA Rizzi;G Sberveglieri;
1997
Abstract
A CVD route to grow MoO3-Bi2O3 thin films on Al2O3 and SiO2/Si(100) is proposed. The composition of the obtained films can be suitably tailored by choosing the proper synthesis and thermal treatment conditions, obtaining thus a light or a heavy mixing of the two oxides.The chemical composition of the films is investigated by XPS and FT-IR, while their microstructure and surface morphology are analized respectively by XRD and AFM. Preliminary data on the gas sensing behaviour of pure MoO3 and Bi doped MoO3 films are presented and discussed.File in questo prodotto:
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