An EBIC study of bulk micro defects (BMDs) in not-intentionally contaminated epi Si submitted to both relaxation and segregation gettering and with an unknown initial contaminant concentration below the sensitivity of DLTS has been carried out. It allowed to establish which was the contaminant (Fe) and the possible range of its initial concentration. An evaluation of the behaviour of the BMDs during relaxation gettering and of the contribution of relaxation gettering to the overall gettering process was performed.

EBIC and DLTS study of not-intentionally contaminated Si epistructures submitted to segregation and relaxation gettering

C Frigeri;E Gombia;A Motta
2006

Abstract

An EBIC study of bulk micro defects (BMDs) in not-intentionally contaminated epi Si submitted to both relaxation and segregation gettering and with an unknown initial contaminant concentration below the sensitivity of DLTS has been carried out. It allowed to establish which was the contaminant (Fe) and the possible range of its initial concentration. An evaluation of the behaviour of the BMDs during relaxation gettering and of the contribution of relaxation gettering to the overall gettering process was performed.
2006
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
EBIC
Si
gettering
DLTS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/120561
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