The diffusion from CoSi 2 layers, implanted with As and B ions, into the underlying Si substrate has been studied by a high-resolution carrier delineation technique. In the early stages of diffusion the junction shape follows the silicide/silicon interface for B, while it is deeper near the CoSi 2 grain boundaries for As. The different behaviour is related to the different diffusion mechanisms of As and B in the silicide layer. Using a two-step anneal or a thin silicide diffusion source a laterally uniform junction has also been obtained for As-implanted CoSi 2. The diffusion coefficients of arsenic and boron in silicon have been measured by this technique. The measured diffusivity values for boron and arsenic are very close to the data reported in the literature.
Arsenic and boron diffusion in silicon from implanted cobalt silicide layers
La Via F;
1995
Abstract
The diffusion from CoSi 2 layers, implanted with As and B ions, into the underlying Si substrate has been studied by a high-resolution carrier delineation technique. In the early stages of diffusion the junction shape follows the silicide/silicon interface for B, while it is deeper near the CoSi 2 grain boundaries for As. The different behaviour is related to the different diffusion mechanisms of As and B in the silicide layer. Using a two-step anneal or a thin silicide diffusion source a laterally uniform junction has also been obtained for As-implanted CoSi 2. The diffusion coefficients of arsenic and boron in silicon have been measured by this technique. The measured diffusivity values for boron and arsenic are very close to the data reported in the literature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
