CNR Institutional Research Information System

LA VIA, FRANCESCO

LA VIA, FRANCESCO  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 336 (tempo di esecuzione: 0.039 secondi).
Titolo Data di pubblicazione Autore(i) File
"Si(n)Ce You Are a Driver": A PCTO Experience about Semiconductor Physic in Italy 1-gen-2021 Mariaconcetta Canino; Laura Vivani; Francesco La Via
3C-SiC film growth on Si substrates 1-gen-2011 Severino A; Locke C; Anzalone R; Camarda M; Piluso; N La Magna A; Saddow; S E; Abbondanza G; D'Arrigo G; La Via; F
3C-SiC grown on Si by using a Si1-xGex buffer layer 1-gen-2019 Zimbone, M; Zielinski, M; Barbagiovanni, E G; Calabretta, C; La Via, F
3C-SiC growth on (001) Si substrates by using a multilayer buffer 1-gen-2013 Canino, A; Severino, A; Piluso, N; La Via, F; Privitera, S Alberti A
3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate 1-gen-2019 Zimbone, Massimo; Zielinski, Marcin; Bongiorno, Corrado; Calabretta, Cristiano; Anzalone, Ruggero; Scalese, Silvia; Fisicaro, Giuseppe; LA MAGNA, Antonino; Mancarella, Fulvio; LA VIA, Francesco
3C-SiC hetero-epitaxial films for sensor fabrication 1-gen-2008 Anzalone R.; Severino A.; Locke C.; Rodilosso D.; Tringali C.; Saddow S.E.; La Via F.; D'Arrigo G.
3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP) 1-gen-2010 D'Arrigo, G; Severino, A; Milazzo, G; Bongiorno, C; Piluso, N; Abbondanza, G; Mauceri, M; Condorelli, G; La Via, F
3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP) 1-gen-2010 D'Arrigo G.; Severino A.; Milazzo G.; Bongiorno C.; Piluso N.; Abbondanza G.; Mauceri M.; Condorelli G.; La Via F.
3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor 1-gen-2009 Anzalone, R; Severino, A; D'Arrigo, G; Bongiorno, C; Fiorenza, P; Foti, G; Condorelli, G; Mauceri, M; Abbondanza, G; La Via, F
4H SiC epitaxial growth with chlorine addition 1-gen-2006 La Via F; Galvagno G; Foti G; Mauceri M; Leone S; Pistone G; Abbondanza G; Veneroni A; Masi M; Valente GL; Crippa D
4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6 1-gen-2014 Mauceri, M; Pecora, A; Litrico, G; Vecchio, C; Puglisi, M; Crippa, D; Piluso, N; Camarda, M; La Via, F
4H-SiC epitaxial layer growth by trichlorosilane (TCS) 1-gen-2008 La Via F; Izzo G; Mauceri M; Pistone G; Condorelli G; Perdicaro L; Abbondanza G; Calcagno L; Foti G; Crippa D
A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures 1-gen-2007 Camarda, M; La Magna, A; La Via, F
A new position sensitive anode for plasmas diagnostic 1-gen-2013 Grasso, R; Tudisco, S; Anzalone, A; Musumeci, F; Scordino, A; Spitaleri, A; Anzalone, R; D'Arrigo, G; La Via, F
A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults 1-gen-2014 Piluso, N; Camarda, M; La Via, F
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy 1-gen-2003 Raineri, V; Calcagno, L; Giannazzo, F; Goghero, D; Musumeci, F; Roccaforte, F; La Via, F
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy 1-gen-2002 Raineri, V; Calcagno, L; Giannazzo, F; Goghero, D; Musumeci, F; Roccaforte, F; Via, La; F,
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application 1-gen-2011 Anzalone R; D'Arrigo G; Camarda M; Locke C; Saddow S E; La Via F
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application 1-gen-2011 R. Anzalone; G. D'Arrigo; M. Camarda; C. Locke; S. Saddow; f. la via
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application 1-gen-2011 Anzalone, R; Camarda, M; D'Arrigo, G; Piluso, N; Severino, A; Canino, A; La Magna, A; Via, La; F,