Ti, Fe, and Co silicide layers, 80-200 nm thick, on top of single crystal silicon substrate have been melted by 25-ns ruby laser pulses and the resolidified structures have been analyzed by transmission electron microscopy, X-ray diffraction, and Rurtherford backscattering spectrometry. Metastable phases and/or epitaxial layers are obtained upon solidifcation. The transient molten layer has been monitored by means of time-resolved optical measurements with nanosecond resolution; in all cases solidification velocity of the order of 1 m ¬? s -1 was observed, and in one case liquid undercooling as much as 800 K was estimated. ¬© 1993 Plenum Publishing Corporation.
Pulsed laser melting and resolidification of metal silicide layers
La Via F;
1993
Abstract
Ti, Fe, and Co silicide layers, 80-200 nm thick, on top of single crystal silicon substrate have been melted by 25-ns ruby laser pulses and the resolidified structures have been analyzed by transmission electron microscopy, X-ray diffraction, and Rurtherford backscattering spectrometry. Metastable phases and/or epitaxial layers are obtained upon solidifcation. The transient molten layer has been monitored by means of time-resolved optical measurements with nanosecond resolution; in all cases solidification velocity of the order of 1 m ¬? s -1 was observed, and in one case liquid undercooling as much as 800 K was estimated. ¬© 1993 Plenum Publishing Corporation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
