Boron diffusion in implanted Co74Ti2 6 amorphous alloy has been studied by secondary ion mass spectrometry (SIMS). Auger electron spectroscopy depth profiling, Rutherford backscattering spectroscopy, and x-ray diffraction have been used to control the crystallization and the interaction with the Si substrate. By comparing computer simulations with the SIMS profiles, the diffusion coefficients of B in Co 74Ti26 have been found in the temperature range between 300 and 400¬?C. An activation energy of 1.63¬±0.05 eV and a preexponential factor of 1.77?ó10-3 cm2/s for the diffusion equation have been found. These values agree with an experimental correlation that appears to be valid for the diffusion in amorphous alloys of all elements with the exception of hydrogen.
Boron diffusion in Co74Ti26 amorphous alloy
La Via F;
1992
Abstract
Boron diffusion in implanted Co74Ti2 6 amorphous alloy has been studied by secondary ion mass spectrometry (SIMS). Auger electron spectroscopy depth profiling, Rutherford backscattering spectroscopy, and x-ray diffraction have been used to control the crystallization and the interaction with the Si substrate. By comparing computer simulations with the SIMS profiles, the diffusion coefficients of B in Co 74Ti26 have been found in the temperature range between 300 and 400¬?C. An activation energy of 1.63¬±0.05 eV and a preexponential factor of 1.77?ó10-3 cm2/s for the diffusion equation have been found. These values agree with an experimental correlation that appears to be valid for the diffusion in amorphous alloys of all elements with the exception of hydrogen.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
