The current-voltage characteristics were measured in Schottky diodes prepared by the deposition of 30 and 60 nm platinum films onto Si,,Äà111,,Äâ wafers and annealing at 520 ¬?C for 1 2 h. The current density in the thin platinum diodes is nearly an order of magnitude higher than that in the thick platinum diodes. In the former the current density also increases with increasing perimeter-to-area ratio. This behaviour has been associated with the formation of a narrow cylindrical silicide region penetrating inside the silicon substrates deeper than the flat internal interface and caused by the vertical diffusion of platinum at the SiO 2 sidewalls. The experimental I-V characteristics are fitted by accounting for the effects of the deep silicide both on the tunnelling contribution and on the lowering of the Schottky barrier height. ¬© 1988.
Dependence of PtSi Schottky diode electrical behaviour on the platinum film thickness and on the annealing process
La Via F;
1988
Abstract
The current-voltage characteristics were measured in Schottky diodes prepared by the deposition of 30 and 60 nm platinum films onto Si,,Äà111,,Äâ wafers and annealing at 520 ¬?C for 1 2 h. The current density in the thin platinum diodes is nearly an order of magnitude higher than that in the thick platinum diodes. In the former the current density also increases with increasing perimeter-to-area ratio. This behaviour has been associated with the formation of a narrow cylindrical silicide region penetrating inside the silicon substrates deeper than the flat internal interface and caused by the vertical diffusion of platinum at the SiO 2 sidewalls. The experimental I-V characteristics are fitted by accounting for the effects of the deep silicide both on the tunnelling contribution and on the lowering of the Schottky barrier height. ¬© 1988.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
