A TEM study of GaAs nanoislands grown on (001) Si substrate by the Droplet Epitaxy technique is presented. The nanoislands turn out to be monocrystalline in perfect epitaxial relationship with Si. By X-ray microanalysis in the TEM it is also seen that the islands are stoichiometric. TEM images of the moiré fringes revealed the presence of dislocations at the nanoislands suggesting strain relaxation.
TEM Characterization of GaAs Nanoislands on Si
C Frigeri;
2011
Abstract
A TEM study of GaAs nanoislands grown on (001) Si substrate by the Droplet Epitaxy technique is presented. The nanoislands turn out to be monocrystalline in perfect epitaxial relationship with Si. By X-ray microanalysis in the TEM it is also seen that the islands are stoichiometric. TEM images of the moiré fringes revealed the presence of dislocations at the nanoislands suggesting strain relaxation.File in questo prodotto:
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