Thin silicon films produced in r.f. glow discharges fed with SiCl4-H2 mixtures are studied. The effect of argon addition to the feed is examined. Emission spectroscopy and laser interferometry were used to correlate some kinetic parameters, such as the deposition rate, with chemical, optical and structural properties of the deposited material. An overall film growth mechanism is suggested in which chemisorbed species and hydrogen atoms play an important role.
The influence of argon addition on the deposition and properties of Si:H, Cl films prepared in a glow discharge
Cicala G;
1986
Abstract
Thin silicon films produced in r.f. glow discharges fed with SiCl4-H2 mixtures are studied. The effect of argon addition to the feed is examined. Emission spectroscopy and laser interferometry were used to correlate some kinetic parameters, such as the deposition rate, with chemical, optical and structural properties of the deposited material. An overall film growth mechanism is suggested in which chemisorbed species and hydrogen atoms play an important role.File in questo prodotto:
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