Hydrogenated and fluorinated silicon nitride films are obtained in a novel resonant plasma-chemical reactor, operated at l8MHz and modulated in the audiofrequency field. This modulation influences both deposition rate and film properties.
EFFECT OF MODULATION ON THE PLASMA DEPOSITION OF HYDROGENATED AND FLUORINATED SILICON-NITRIDE
CICALA G;
1990
Abstract
Hydrogenated and fluorinated silicon nitride films are obtained in a novel resonant plasma-chemical reactor, operated at l8MHz and modulated in the audiofrequency field. This modulation influences both deposition rate and film properties.File in questo prodotto:
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