NF3 plasmas have been investigated for the cleaning of reactors for amorphous silicon (a-Si:H) deposition from silane. Optical emission spectroscopy, also time resolved, has been used to measure F*, N2*, NF*, and SiF* emitting species in the plasma phase. Measurements of mass spectrometry, etching rate and dc self-bias voltage at the rf powered electrode have also been used for process diagnostics. The a-Si:H etching process by F atoms is shown to occur under loading conditions: the etching rate does not correlate with F atom density. The recombination processes NFx+F-->NFx+1(X=2, 1) and NF+NF-->N2+2F together with the NF3 electron impact dissociation into NFx + F have been found to be significant for the NF3 plasma chemistry as well as the fluorine conversion into SiF4.
STUDY OF THE NF3 PLASMA CLEANING OF REACTORS FOR AMORPHOUS-SILICON DEPOSITION
G Cicala;
1994
Abstract
NF3 plasmas have been investigated for the cleaning of reactors for amorphous silicon (a-Si:H) deposition from silane. Optical emission spectroscopy, also time resolved, has been used to measure F*, N2*, NF*, and SiF* emitting species in the plasma phase. Measurements of mass spectrometry, etching rate and dc self-bias voltage at the rf powered electrode have also been used for process diagnostics. The a-Si:H etching process by F atoms is shown to occur under loading conditions: the etching rate does not correlate with F atom density. The recombination processes NFx+F-->NFx+1(X=2, 1) and NF+NF-->N2+2F together with the NF3 electron impact dissociation into NFx + F have been found to be significant for the NF3 plasma chemistry as well as the fluorine conversion into SiF4.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
