An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].
Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires
Catalano M;Taurino A;Lomascolo M;De Giorgi M;Passaseo A;Goldoni G;
2000
Abstract
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].File in questo prodotto:
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