Self-aligned CoSi layers were grown on polycrystalline silicon wafers (001). The thermal stability, electrical properties and morphology of the thin layers were investigated at temperature range 850-1000 ¬?C. The resistance increased at increased annealing temperature. The activation energy was obtained, which was attributed to the silicon grain growth and on the increased rate of resistance at different temperature.
Effect of lateral dimensional scaling on the thermal stability of thin CoSi2 layers reacted on polycrystalline silicon
Alberti A;La Via F;
2000
Abstract
Self-aligned CoSi layers were grown on polycrystalline silicon wafers (001). The thermal stability, electrical properties and morphology of the thin layers were investigated at temperature range 850-1000 ¬?C. The resistance increased at increased annealing temperature. The activation energy was obtained, which was attributed to the silicon grain growth and on the increased rate of resistance at different temperature.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
