Category II and category III defects left after annealing, i. e. end-of-range extrinsic dislocation loops and intrinsic stacking fault tetrahedra due to solid-phase epitaxial regrowth, are studied in 200 KeV Fe implanted InP. By increasing the annealing time loop coarsening occurs, very likely starting from an initial distribution of very small loops, whereas the density of category III defects decreases.

Category II and category III defects in 200 KeV Fe implanted InP

C Frigeri
1995

Abstract

Category II and category III defects left after annealing, i. e. end-of-range extrinsic dislocation loops and intrinsic stacking fault tetrahedra due to solid-phase epitaxial regrowth, are studied in 200 KeV Fe implanted InP. By increasing the annealing time loop coarsening occurs, very likely starting from an initial distribution of very small loops, whereas the density of category III defects decreases.
1995
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
0-87849-716-1
InP
Fe
implantation
TEM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/123396
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