Category II and category III defects left after annealing, i. e. end-of-range extrinsic dislocation loops and intrinsic stacking fault tetrahedra due to solid-phase epitaxial regrowth, are studied in 200 KeV Fe implanted InP. By increasing the annealing time loop coarsening occurs, very likely starting from an initial distribution of very small loops, whereas the density of category III defects decreases.

Category II and category III defects in 200 KeV Fe implanted InP

C Frigeri
1995

Abstract

Category II and category III defects left after annealing, i. e. end-of-range extrinsic dislocation loops and intrinsic stacking fault tetrahedra due to solid-phase epitaxial regrowth, are studied in 200 KeV Fe implanted InP. By increasing the annealing time loop coarsening occurs, very likely starting from an initial distribution of very small loops, whereas the density of category III defects decreases.
1995
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
Suezawa, M; KatayamaYoshida, H
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4
18th International Conference on Defects in Semiconductors (ICDS-18)
1273
1278
0-87849-716-1
http://www.scientific.net/MSF.196-201.1273
TRANS TECH-SCITEC PUBLICATIONS LTD
UETIKON
SVIZZERA
Sì, ma tipo non specificato
23-28 July 1995
Sendai (Japan)
InP
Fe
implantation
TEM
1
none
Frigeri, C
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/123396
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