Typical dislocation atmospheres of different n-type GaAs wafers have been studied by means of DSL photoetching, SEM-EBIC and microRaman spectroscopy. Different aspects concerning the properties of these defects have been studied, i.e. local crystal misorientation, carrier depletion depth, local doping and residual strain.
Study of the dislocation atmospheres in n-type GaAs by DSL photoetching, EBIC and microRaman measurements
C Frigeri;
1995
Abstract
Typical dislocation atmospheres of different n-type GaAs wafers have been studied by means of DSL photoetching, SEM-EBIC and microRaman spectroscopy. Different aspects concerning the properties of these defects have been studied, i.e. local crystal misorientation, carrier depletion depth, local doping and residual strain.File in questo prodotto:
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