The defect structures, including slip traces, originating from the interaction between dislocations and impurities in n-type LEC GaAs, grown from either As- or Ga-rich melts, have been investigated. The crystals were doped with either Si, S or Te. Independently of the dopant used, the gettering regions around dislocations have been found to be mostly depleted of dopant atoms suggesting that EL2 is generated, rather than gettered, by the dislocations.
Defect structures and impurity distribution inhomogeneities in LEC GaAs crystals
C Frigeri
1993
Abstract
The defect structures, including slip traces, originating from the interaction between dislocations and impurities in n-type LEC GaAs, grown from either As- or Ga-rich melts, have been investigated. The crystals were doped with either Si, S or Te. Independently of the dopant used, the gettering regions around dislocations have been found to be mostly depleted of dopant atoms suggesting that EL2 is generated, rather than gettered, by the dislocations.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
