Electron microscopy is an important technique to study interfaces and microdefects in advanced III-V compound semiconductors. The paper briefly reviews some of the TEM methods used to this purpose and shows examples of their application to the characterization of epitaxial structures such as InGaAs/GaAs and GaAs/Ge as well as processed substrates like implanted InP.

Electron microscopy techniques for evaluating epitaxial and bulk III-V compound semiconductors

C Frigeri
1995

Abstract

Electron microscopy is an important technique to study interfaces and microdefects in advanced III-V compound semiconductors. The paper briefly reviews some of the TEM methods used to this purpose and shows examples of their application to the characterization of epitaxial structures such as InGaAs/GaAs and GaAs/Ge as well as processed substrates like implanted InP.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/123826
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